TY - GEN
T1 - Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices
AU - Takano, K.
AU - Katayama, K.
AU - Mizukusa, S.
AU - Amakawa, S.
AU - Yoshida, T.
AU - Fujishima, M.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/12
Y1 - 2015/5/12
N2 - This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.
AB - This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.
UR - http://www.scopus.com/inward/record.url?scp=84940740643&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940740643&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2015.7106100
DO - 10.1109/ICMTS.2015.7106100
M3 - Conference contribution
AN - SCOPUS:84940740643
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 230
EP - 234
BT - ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015
Y2 - 23 March 2015 through 26 March 2015
ER -