Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

K. Takano, Kosuke Katayama, S. Mizukusa, S. Amakawa, T. Yoshida, M. Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.

Original languageEnglish
Title of host publicationICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-234
Number of pages5
Volume2015-May
ISBN (Electronic)9781479983025
DOIs
Publication statusPublished - 2015 May 12
Externally publishedYes
Event2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015 - Tempe, United States
Duration: 2015 Mar 232015 Mar 26

Other

Other2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015
CountryUnited States
CityTempe
Period15/3/2315/3/26

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takano, K., Katayama, K., Mizukusa, S., Amakawa, S., Yoshida, T., & Fujishima, M. (2015). Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices. In ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures (Vol. 2015-May, pp. 230-234). [7106100] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2015.7106100