Systematic control of doped carrier density without disorder at interface of oxide heterostructures

Motoaki Hirayama, Masatoshi Imada

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4 Citations (Scopus)


We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.

Original languageEnglish
Article number034704
JournalJournal of the Physical Society of Japan
Issue number3
Publication statusPublished - 2010 Mar 1
Externally publishedYes



  • Correlated-electron systems
  • Doping control
  • Heterostructure
  • Interface
  • Two-dimensional electron systems

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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