We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.
- Correlated-electron systems
- Doping control
- Two-dimensional electron systems
ASJC Scopus subject areas
- Physics and Astronomy(all)