Systematic control of doped carrier density without disorder at interface of oxide heterostructures

Motoaki Hirayama, Masatoshi Imada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.

Original languageEnglish
Article number034704
JournalJournal of the Physical Society of Japan
Volume79
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1
Externally publishedYes

Fingerprint

disorders
oxides
metal oxides
unity
transition metals
cells

Keywords

  • Correlated-electron systems
  • Doping control
  • Heterostructure
  • Interface
  • Two-dimensional electron systems

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Systematic control of doped carrier density without disorder at interface of oxide heterostructures. / Hirayama, Motoaki; Imada, Masatoshi.

In: Journal of the Physical Society of Japan, Vol. 79, No. 3, 034704, 01.03.2010.

Research output: Contribution to journalArticle

@article{fd9bf669db9d4647b1f60c28c8250515,
title = "Systematic control of doped carrier density without disorder at interface of oxide heterostructures",
abstract = "We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.",
keywords = "Correlated-electron systems, Doping control, Heterostructure, Interface, Two-dimensional electron systems",
author = "Motoaki Hirayama and Masatoshi Imada",
year = "2010",
month = "3",
day = "1",
doi = "10.1143/JPSJ.79.034704",
language = "English",
volume = "79",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "3",

}

TY - JOUR

T1 - Systematic control of doped carrier density without disorder at interface of oxide heterostructures

AU - Hirayama, Motoaki

AU - Imada, Masatoshi

PY - 2010/3/1

Y1 - 2010/3/1

N2 - We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.

AB - We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.

KW - Correlated-electron systems

KW - Doping control

KW - Heterostructure

KW - Interface

KW - Two-dimensional electron systems

UR - http://www.scopus.com/inward/record.url?scp=77949760532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949760532&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.79.034704

DO - 10.1143/JPSJ.79.034704

M3 - Article

AN - SCOPUS:77949760532

VL - 79

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 3

M1 - 034704

ER -