Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-50
Number of pages2
ISBN (Electronic)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/TerritoryUnited States
CitySan Diego
Period03/8/2503/8/27

Keywords

  • Current measurement
  • Diodes
  • Doping
  • Electron beams
  • Gallium nitride
  • Heterojunction bipolar transistors
  • P-n junctions
  • Plasma temperature
  • Scanning electron microscopy
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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