Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

K. Kumakura; T. Makimoto; N. Kobayashi; T. Hashizume; T. Fukui; H. Hasegawa

doi:10.1109/ISCS.2003.1239900

Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-50
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239900
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	03/8/25 → 03/8/27

Keywords

Current measurement
Diodes
Doping
Electron beams
Gallium nitride
Heterojunction bipolar transistors
P-n junctions
Plasma temperature
Scanning electron microscopy
Substrates

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239900

Cite this

Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., & Hasegawa, H. (2003). Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 49-50). [1239900] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239900

Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. / Kumakura, K.; Makimoto, T.; Kobayashi, N. et al.

2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 49-50 1239900 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumakura, K, Makimoto, T, Kobayashi, N, Hashizume, T, Fukui, T & Hasegawa, H 2003, Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239900, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 49-50, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239900

Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H. Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 49-50. 1239900. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239900

Kumakura, K. ; Makimoto, T. ; Kobayashi, N. et al. / Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 49-50 (IEEE International Symposium on Compound Semiconductors, Proceedings).

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abstract = "In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.",

keywords = "Current measurement, Diodes, Doping, Electron beams, Gallium nitride, Heterojunction bipolar transistors, P-n junctions, Plasma temperature, Scanning electron microscopy, Substrates",

author = "K. Kumakura and T. Makimoto and N. Kobayashi and T. Hashizume and T. Fukui and H. Hasegawa",

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AU - Fukui, T.

AU - Hasegawa, H.

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AB - In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

KW - Current measurement

KW - Diodes

KW - Doping

KW - Electron beams

KW - Gallium nitride

KW - Heterojunction bipolar transistors

KW - P-n junctions

KW - Plasma temperature

KW - Scanning electron microscopy

KW - Substrates

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BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

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Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

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