Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

K. Kumakura, Toshiki Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-50
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Induced currents
Heterojunction bipolar transistors
Electric current measurement
Nitrides
Electron beams
Doping (additives)

Keywords

  • Current measurement
  • Diodes
  • Doping
  • Electron beams
  • Gallium nitride
  • Heterojunction bipolar transistors
  • P-n junctions
  • Plasma temperature
  • Scanning electron microscopy
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., & Hasegawa, H. (2003). Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 49-50). [1239900] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239900

Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 49-50 1239900.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kumakura, K, Makimoto, T, Kobayashi, N, Hashizume, T, Fukui, T & Hasegawa, H 2003, Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239900, Institute of Electrical and Electronics Engineers Inc., pp. 49-50, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239900
Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H. Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 49-50. 1239900 https://doi.org/10.1109/ISCS.2003.1239900
Kumakura, K. ; Makimoto, Toshiki ; Kobayashi, N. ; Hashizume, T. ; Fukui, T. ; Hasegawa, H. / Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 49-50
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