Systematic study of insulator deposition effect (Si3N 4, SiO2, AlN, and Al2O3) on electrical properties in AlGaN/GaN heterostructures

Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

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