Abstract
Co-Al-O film was fabricated using the reactive r.f. magnetron sputtering technique. A maximum magnetoresistance (MR) of approximately 7% was established through optimizing the sputter deposition conditions such as sputter power and gas flow rate. TEM characterization of the film revealed a nano-granular structure that consisted of ferromagnetic grains with grain diameters on the order of several nm together with non-magnetic grain boundary layers with the thickness on the order of less than 1 nm. The large MR was attributed to electron tunneling thorough this very thin grain boundary layer between individual ferromagnetic grains.
| Original language | English |
|---|---|
| Pages (from-to) | 569-574 |
| Number of pages | 6 |
| Journal | Journal of Materials Science: Materials in Medicine |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2001 Oct |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics