TEM characterization of Co-Al-O nano-granular TMR film

K. Kamei, M. Yonemura, K. Hanafusa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Co-Al-O film was fabricated using the reactive r.f. magnetron sputtering technique. A maximum magnetoresistance (MR) of approximately 7% was established through optimizing the sputter deposition conditions such as sputter power and gas flow rate. TEM characterization of the film revealed a nano-granular structure that consisted of ferromagnetic grains with grain diameters on the order of several nm together with non-magnetic grain boundary layers with the thickness on the order of less than 1 nm. The large MR was attributed to electron tunneling thorough this very thin grain boundary layer between individual ferromagnetic grains.

Original languageEnglish
Pages (from-to)569-574
Number of pages6
JournalJournal of Materials Science: Materials in Medicine
Volume12
Issue number10
DOIs
Publication statusPublished - 2001 Oct
Externally publishedYes

Fingerprint

Gases
Magnetoresistance
Electrons
Transmission electron microscopy
transmission electron microscopy
boundary layers
Boundary layers
Grain boundaries
grain boundaries
Sputter deposition
Electron tunneling
Reactive sputtering
electron tunneling
Magnetron sputtering
gas flow
Flow of gases
magnetron sputtering
flow velocity
Flow rate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

TEM characterization of Co-Al-O nano-granular TMR film. / Kamei, K.; Yonemura, M.; Hanafusa, K.

In: Journal of Materials Science: Materials in Medicine, Vol. 12, No. 10, 10.2001, p. 569-574.

Research output: Contribution to journalArticle

Kamei, K. ; Yonemura, M. ; Hanafusa, K. / TEM characterization of Co-Al-O nano-granular TMR film. In: Journal of Materials Science: Materials in Medicine. 2001 ; Vol. 12, No. 10. pp. 569-574.
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