TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing, Makoto Yoshida, G. Sasaki

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

Original languageEnglish
Pages (from-to)577-582
Number of pages6
JournalScripta Materialia
Volume47
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1
Externally publishedYes

Fingerprint

Sodium
sodium
Transmission electron microscopy
Glass
transmission electron microscopy
glass
Silicon oxides
Silicon
Amorphous silicon
silicon oxides
amorphous silicon
Ions
Oxygen
microstructure
Microstructure
silicon
oxygen
ions

Keywords

  • Anodic bonding
  • Glass
  • Silicon
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

Cite this

TEM study of the interface of anodic-bonded Si/glass. / Xing, Q. F.; Yoshida, Makoto; Sasaki, G.

In: Scripta Materialia, Vol. 47, No. 9, 01.11.2002, p. 577-582.

Research output: Contribution to journalArticle

Xing, Q. F. ; Yoshida, Makoto ; Sasaki, G. / TEM study of the interface of anodic-bonded Si/glass. In: Scripta Materialia. 2002 ; Vol. 47, No. 9. pp. 577-582.
@article{9c6094d4fff04385b2f0f3a29ad6d0f3,
title = "TEM study of the interface of anodic-bonded Si/glass",
abstract = "Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.",
keywords = "Anodic bonding, Glass, Silicon, Transmission electron microscopy (TEM)",
author = "Xing, {Q. F.} and Makoto Yoshida and G. Sasaki",
year = "2002",
month = "11",
day = "1",
doi = "10.1016/S1359-6462(02)00170-7",
language = "English",
volume = "47",
pages = "577--582",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - TEM study of the interface of anodic-bonded Si/glass

AU - Xing, Q. F.

AU - Yoshida, Makoto

AU - Sasaki, G.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

AB - Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

KW - Anodic bonding

KW - Glass

KW - Silicon

KW - Transmission electron microscopy (TEM)

UR - http://www.scopus.com/inward/record.url?scp=0036836376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036836376&partnerID=8YFLogxK

U2 - 10.1016/S1359-6462(02)00170-7

DO - 10.1016/S1359-6462(02)00170-7

M3 - Article

VL - 47

SP - 577

EP - 582

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 9

ER -