TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing, M. Yoshida, G. Sasaki

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

Original languageEnglish
Pages (from-to)577-582
Number of pages6
JournalScripta Materialia
Volume47
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1

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Keywords

  • Anodic bonding
  • Glass
  • Silicon
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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