Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

Takuro Fujii, Hidetaka Nishi, Koji Takeda, Erina Kanno, Koichi Hasebe, Tomonari Sato, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed energy-efficient 1.3-μm membrane lasers on Si for datacom applications. We employ InGaAlAs-based MQWs as an active material to improve the temperature characteristics and modulation speed. We achieved lasing at up to 95°C and direct modulation up to 40-Gbit/s at 25°C.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-88
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Externally publishedYes
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

Keywords

  • direct bonding
  • distributed-reflector laser
  • epitaxial growth
  • silicon photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Fujii, T., Nishi, H., Takeda, K., Kanno, E., Hasebe, K., Sato, T., Kakitsuka, T., Fukuda, H., Tsuchizawa, T., & Matsuo, S. (2018). Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 87-88). [8516179] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516179