Temperature Characteristics of ScAlN/SiO 2 BAW Resonators

Honoka Igeta, Makoto Totsuka, Masashi Suzuki, Takahiko Yanagitani

Research output: Contribution to journalConference article

Abstract

The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.

Original languageEnglish
Article number8580165
JournalIEEE International Ultrasonics Symposium, IUS
Volume2018-January
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes
Event2018 IEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan
Duration: 2018 Oct 222018 Oct 25

Fingerprint

resonators
temperature
diamond films
filters
coupling coefficients

Keywords

  • BAW resonators
  • electromechanical coupling coefficient
  • ScAlN
  • SiO2
  • TCF
  • the stack structure

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Temperature Characteristics of ScAlN/SiO 2 BAW Resonators . / Igeta, Honoka; Totsuka, Makoto; Suzuki, Masashi; Yanagitani, Takahiko.

In: IEEE International Ultrasonics Symposium, IUS, Vol. 2018-January, 8580165, 01.01.2018.

Research output: Contribution to journalConference article

@article{822e66ca285c47f6bf5baec9697a1c8f,
title = "Temperature Characteristics of ScAlN/SiO 2 BAW Resonators",
abstract = "The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.",
keywords = "BAW resonators, electromechanical coupling coefficient, ScAlN, SiO2, TCF, the stack structure",
author = "Honoka Igeta and Makoto Totsuka and Masashi Suzuki and Takahiko Yanagitani",
year = "2018",
month = "1",
day = "1",
doi = "10.1109/ULTSYM.2018.8580165",
language = "English",
volume = "2018-January",
journal = "IEEE International Ultrasonics Symposium, IUS",
issn = "1948-5719",

}

TY - JOUR

T1 - Temperature Characteristics of ScAlN/SiO 2 BAW Resonators

AU - Igeta, Honoka

AU - Totsuka, Makoto

AU - Suzuki, Masashi

AU - Yanagitani, Takahiko

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.

AB - The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.

KW - BAW resonators

KW - electromechanical coupling coefficient

KW - ScAlN

KW - SiO2

KW - TCF

KW - the stack structure

UR - http://www.scopus.com/inward/record.url?scp=85062635149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062635149&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2018.8580165

DO - 10.1109/ULTSYM.2018.8580165

M3 - Conference article

AN - SCOPUS:85062635149

VL - 2018-January

JO - IEEE International Ultrasonics Symposium, IUS

JF - IEEE International Ultrasonics Symposium, IUS

SN - 1948-5719

M1 - 8580165

ER -