Temperature dependence of current-voltage characteristics of npn -type GaNInGaN double heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated the temperature dependence of the common-emitter current-voltage (I-V) characteristics of npn -type GaNInGaN double heterojunction bipolar transistors. Although the current gain decreases with increasing measurement temperature, the current gain measured at 300 °C is still as high as 308. The reduction of the current gain with temperature is attributed not only to the hole back-injection current from the base into the emitter but also to the shorter minority carrier diffusion length due to the increase in the carrier concentration of the p-InGaN base.

Original languageEnglish
Article number133514
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
Publication statusPublished - 2007
Externally publishedYes

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bipolar transistors
heterojunctions
temperature dependence
electric potential
emitters
diffusion length
minority carriers
temperature measurement
injection
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of current-voltage characteristics of npn -type GaNInGaN double heterojunction bipolar transistors. / Nishikawa, Atsushi; Kumakura, Kazuhide; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 91, No. 13, 133514, 2007.

Research output: Contribution to journalArticle

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