Temperature dependence of InGaAsP electro-absorption modulator module

Hideaki Tanaka, Masayoshi Horita, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE
Pages540-543
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

Other

OtherProceedings of the 7th International Conference on Indium Phosphide and Related Materials
CitySapporo, Jpn
Period95/5/995/5/13

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Tanaka, H., Horita, M., & Matsushima, Y. (1995). Temperature dependence of InGaAsP electro-absorption modulator module. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 540-543). IEEE.