Temperature dependence of InGaAsP electro-absorption modulator module

Hideaki Tanaka; Masayoshi Horita; Yuichi Matsushima

Temperature dependence of InGaAsP electro-absorption modulator module

Hideaki Tanaka, Masayoshi Horita, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.

Original language	English
Title of host publication	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publisher	IEEE
Pages	540-543
Number of pages	4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 1995 May 9 → 1995 May 13

Other

Other	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials
City	Sapporo, Jpn
Period	95/5/9 → 95/5/13

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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Cite this

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title = "Temperature dependence of InGaAsP electro-absorption modulator module",

abstract = "The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.",

author = "Hideaki Tanaka and Masayoshi Horita and Yuichi Matsushima",

year = "1995",

language = "English",

pages = "540--543",

booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

}

TY - GEN

T1 - Temperature dependence of InGaAsP electro-absorption modulator module

AU - Tanaka, Hideaki

AU - Horita, Masayoshi

AU - Matsushima, Yuichi

PY - 1995

Y1 - 1995

N2 - The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.

AB - The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029225991&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029225991

SP - 540

EP - 543

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

PB - IEEE

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -