Abstract
The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publisher | IEEE |
| Pages | 540-543 |
| Number of pages | 4 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 1995 May 9 → 1995 May 13 |
Other
| Other | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Sapporo, Jpn |
| Period | 95/5/9 → 95/5/13 |
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
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Cite this
Tanaka, H., Horita, M., & Matsushima, Y. (1995). Temperature dependence of InGaAsP electro-absorption modulator module. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 540-543). IEEE.