Abstract
The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publisher | IEEE |
| Pages | 540-543 |
| Number of pages | 4 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 1995 May 9 → 1995 May 13 |
Other
| Other | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Sapporo, Jpn |
| Period | 95/5/9 → 95/5/13 |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Temperature dependence of InGaAsP electro-absorption modulator module. / Tanaka, Hideaki; Horita, Masayoshi; Matsushima, Yuichi.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1995. p. 540-543.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Temperature dependence of InGaAsP electro-absorption modulator module
AU - Tanaka, Hideaki
AU - Horita, Masayoshi
AU - Matsushima, Yuichi
PY - 1995
Y1 - 1995
N2 - The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.
AB - The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.
UR - http://www.scopus.com/inward/record.url?scp=0029225991&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029225991&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029225991
SP - 540
EP - 543
BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
PB - IEEE
ER -