Temperature dependence of magnetization reversal in TbFeCo films

S. Brown, J. W. Harrell, H. Fujiwara, Teruaki Takeuchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The magnetization reversal process has been studied in a series of four TbFeCo films over the temperature range 300-460 K. The films were characterized by time decay, dynamic coercivity, Kerr imaging, and torque measurements. For a film with a sputter-etched SiN underlayer, the reversal process at low temperatures was dominated by nucleation followed by rapid domain wall motion. The low temperature relaxation curves for this sample were analyzed using a Fatuzzo model. At high temperatures, the Fatuzzo model did not apply. For the other films, with no etching, relaxation curves were logarithmic at all temperatures. All activation volumes increased with increasing temperature and decreased with increasing sputtering pressure. The magnetic anisotropy direction changed from perpendicular to in-plane as the argon sputtering pressure was increased.

Original languageEnglish
Pages (from-to)8243-8245
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15
Externally publishedYes

Fingerprint

magnetization
temperature dependence
sputtering
curves
coercivity
temperature
domain wall
torque
argon
etching
nucleation
activation
anisotropy
decay

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Temperature dependence of magnetization reversal in TbFeCo films. / Brown, S.; Harrell, J. W.; Fujiwara, H.; Takeuchi, Teruaki.

In: Journal of Applied Physics, Vol. 91, No. 10 I, 15.05.2002, p. 8243-8245.

Research output: Contribution to journalArticle

Brown, S. ; Harrell, J. W. ; Fujiwara, H. ; Takeuchi, Teruaki. / Temperature dependence of magnetization reversal in TbFeCo films. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 10 I. pp. 8243-8245.
@article{5d386f3c166a40bea52b456288142042,
title = "Temperature dependence of magnetization reversal in TbFeCo films",
abstract = "The magnetization reversal process has been studied in a series of four TbFeCo films over the temperature range 300-460 K. The films were characterized by time decay, dynamic coercivity, Kerr imaging, and torque measurements. For a film with a sputter-etched SiN underlayer, the reversal process at low temperatures was dominated by nucleation followed by rapid domain wall motion. The low temperature relaxation curves for this sample were analyzed using a Fatuzzo model. At high temperatures, the Fatuzzo model did not apply. For the other films, with no etching, relaxation curves were logarithmic at all temperatures. All activation volumes increased with increasing temperature and decreased with increasing sputtering pressure. The magnetic anisotropy direction changed from perpendicular to in-plane as the argon sputtering pressure was increased.",
author = "S. Brown and Harrell, {J. W.} and H. Fujiwara and Teruaki Takeuchi",
year = "2002",
month = "5",
day = "15",
doi = "10.1063/1.1447516",
language = "English",
volume = "91",
pages = "8243--8245",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10 I",

}

TY - JOUR

T1 - Temperature dependence of magnetization reversal in TbFeCo films

AU - Brown, S.

AU - Harrell, J. W.

AU - Fujiwara, H.

AU - Takeuchi, Teruaki

PY - 2002/5/15

Y1 - 2002/5/15

N2 - The magnetization reversal process has been studied in a series of four TbFeCo films over the temperature range 300-460 K. The films were characterized by time decay, dynamic coercivity, Kerr imaging, and torque measurements. For a film with a sputter-etched SiN underlayer, the reversal process at low temperatures was dominated by nucleation followed by rapid domain wall motion. The low temperature relaxation curves for this sample were analyzed using a Fatuzzo model. At high temperatures, the Fatuzzo model did not apply. For the other films, with no etching, relaxation curves were logarithmic at all temperatures. All activation volumes increased with increasing temperature and decreased with increasing sputtering pressure. The magnetic anisotropy direction changed from perpendicular to in-plane as the argon sputtering pressure was increased.

AB - The magnetization reversal process has been studied in a series of four TbFeCo films over the temperature range 300-460 K. The films were characterized by time decay, dynamic coercivity, Kerr imaging, and torque measurements. For a film with a sputter-etched SiN underlayer, the reversal process at low temperatures was dominated by nucleation followed by rapid domain wall motion. The low temperature relaxation curves for this sample were analyzed using a Fatuzzo model. At high temperatures, the Fatuzzo model did not apply. For the other films, with no etching, relaxation curves were logarithmic at all temperatures. All activation volumes increased with increasing temperature and decreased with increasing sputtering pressure. The magnetic anisotropy direction changed from perpendicular to in-plane as the argon sputtering pressure was increased.

UR - http://www.scopus.com/inward/record.url?scp=0037094775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037094775&partnerID=8YFLogxK

U2 - 10.1063/1.1447516

DO - 10.1063/1.1447516

M3 - Article

AN - SCOPUS:0037094775

VL - 91

SP - 8243

EP - 8245

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10 I

ER -