Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon

Kyozaburo Takeda, K. Sakui, M. Sakata

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.

Original languageEnglish
Article number022
Pages (from-to)767-776
Number of pages10
JournalJournal of Physics C: Solid State Physics
Volume15
Issue number4
DOIs
Publication statusPublished - 1982
Externally publishedYes

Fingerprint

Silicon
Hall effect
temperature dependence
Phonon scattering
Hole mobility
silicon
coefficients
Valence bands
Temperature
hole mobility
interactions
valence
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon. / Takeda, Kyozaburo; Sakui, K.; Sakata, M.

In: Journal of Physics C: Solid State Physics, Vol. 15, No. 4, 022, 1982, p. 767-776.

Research output: Contribution to journalArticle

@article{d82af352e1504a7cb32e7d83888c5ff7,
title = "Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon",
abstract = "Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.",
author = "Kyozaburo Takeda and K. Sakui and M. Sakata",
year = "1982",
doi = "10.1088/0022-3719/15/4/022",
language = "English",
volume = "15",
pages = "767--776",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "4",

}

TY - JOUR

T1 - Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon

AU - Takeda, Kyozaburo

AU - Sakui, K.

AU - Sakata, M.

PY - 1982

Y1 - 1982

N2 - Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.

AB - Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.

UR - http://www.scopus.com/inward/record.url?scp=29144453578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29144453578&partnerID=8YFLogxK

U2 - 10.1088/0022-3719/15/4/022

DO - 10.1088/0022-3719/15/4/022

M3 - Article

AN - SCOPUS:29144453578

VL - 15

SP - 767

EP - 776

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 4

M1 - 022

ER -