Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama, Atsushi Tackeuchi, Tsuguo Inata, Sunichi Muto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages235-238
Number of pages4
ISBN (Print)0854984100
Publication statusPublished - 1991 Dec 1
Externally publishedYes
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: 1991 Sep 91991 Sep 12

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period91/9/991/9/12

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures'. Together they form a unique fingerprint.

  • Cite this

    Sugiyama, Y., Tackeuchi, A., Inata, T., & Muto, S. (1991). Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures. In Institute of Physics Conference Series (pp. 235-238). (Institute of Physics Conference Series; Vol. 120). Publ by IOP Publishing Ltd.