Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama, Atsushi Tackeuchi, Tsuguo Inata, Sunichi Muto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

Original languageEnglish
Pages (from-to)L1454-L1457
JournalJapanese journal of applied physics
Volume30
Issue number8
DOIs
Publication statusPublished - 1991 Aug

Keywords

  • Exciton
  • Pump-probe
  • Quantum well
  • Temperature dependence
  • Time-resolved photoluminescence
  • Tunnel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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