Temperature dependence of photoluminescence decay time in tunneling Bi-quantum-well structures

Yoshihiro Sugiyama, Atsushi Tackeuchi, Tsuguo Nata, Sunichi Muto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume30
Issue number8 B
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Photoluminescence
quantum wells
photoluminescence
temperature dependence
Electron tunneling
Electrons
decay
Excitons
Optical systems
Pumps
electron tunneling
Temperature
free electrons
excitons
pumps
probes
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of photoluminescence decay time in tunneling Bi-quantum-well structures. / Sugiyama, Yoshihiro; Tackeuchi, Atsushi; Nata, Tsuguo; Muto, Sunichi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 30, No. 8 B, 1991.

Research output: Contribution to journalArticle

@article{819c469f2382461fa8e10c534bbc2841,
title = "Temperature dependence of photoluminescence decay time in tunneling Bi-quantum-well structures",
abstract = "We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.",
author = "Yoshihiro Sugiyama and Atsushi Tackeuchi and Tsuguo Nata and Sunichi Muto",
year = "1991",
language = "English",
volume = "30",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 B",

}

TY - JOUR

T1 - Temperature dependence of photoluminescence decay time in tunneling Bi-quantum-well structures

AU - Sugiyama, Yoshihiro

AU - Tackeuchi, Atsushi

AU - Nata, Tsuguo

AU - Muto, Sunichi

PY - 1991

Y1 - 1991

N2 - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

AB - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

UR - http://www.scopus.com/inward/record.url?scp=0026207057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026207057&partnerID=8YFLogxK

M3 - Article

VL - 30

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -