TY - JOUR
T1 - Temperature dependence of spin relaxation time in InAs columnar quantum dots at 10 to 150K
AU - Nakanishi, Sota
AU - Sasayama, Kazutoshi
AU - Oyanagi, Yoshitsugu
AU - Yamaguchi, Ryo
AU - Lu, Shulong
AU - Li, Lianhe
AU - Fiore, Andrea
AU - Tackeuchi, Atsushi
PY - 2012/4
Y1 - 2012/4
N2 - We have investigated carrier spin relaxation in InAs columnar quantum dots (CQDs) using time-resolved photoluminescence measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxations of the 3- and 35-period SL CQDs show double exponential decay up to 50 and 130 K, respectively. The spin relaxation times of the fast component, whose amplitudes are 4-11 times larger than that of the slow component, are around 100 ps for the two samples. For the 3-period SL CQDs, the fast spin relaxation time shows no temperature dependence up to around 50 K, indicating the relevance of the Bir-Aronov-Pikus process. The slow spin relaxation time of the 35-period SL CQDs was found to decrease from 3.42 ns at 10 K to 0.849 ns at 130 K. This large change may be explained by the Elliott-Yafet process considering acoustic phonon scattering.
AB - We have investigated carrier spin relaxation in InAs columnar quantum dots (CQDs) using time-resolved photoluminescence measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxations of the 3- and 35-period SL CQDs show double exponential decay up to 50 and 130 K, respectively. The spin relaxation times of the fast component, whose amplitudes are 4-11 times larger than that of the slow component, are around 100 ps for the two samples. For the 3-period SL CQDs, the fast spin relaxation time shows no temperature dependence up to around 50 K, indicating the relevance of the Bir-Aronov-Pikus process. The slow spin relaxation time of the 35-period SL CQDs was found to decrease from 3.42 ns at 10 K to 0.849 ns at 130 K. This large change may be explained by the Elliott-Yafet process considering acoustic phonon scattering.
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U2 - 10.1143/JJAP.51.04DM05
DO - 10.1143/JJAP.51.04DM05
M3 - Article
AN - SCOPUS:84860382172
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 PART 2
M1 - 04DM05
ER -