Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas, Benjamin Rockwell, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, M. Kobayashi, R. L. Gunshor

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Abstract

A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

Original languageEnglish
Pages (from-to)6569-6573
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number11
DOIs
Publication statusPublished - 1995 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Thomas, R. J., Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M., & Gunshor, R. L. (1995). Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer). Journal of Applied Physics, 78(11), 6569-6573. https://doi.org/10.1063/1.360477