A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1995|
ASJC Scopus subject areas
- Physics and Astronomy(all)