Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas, Benjamin Rockwell, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

Original languageEnglish
Pages (from-to)6569-6573
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number11
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

temperature dependence
optical measurement
temperature
thermal expansion
elastic properties
expansion
coefficients
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thomas, R. J., Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M., & Gunshor, R. L. (1995). Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer). Journal of Applied Physics, 78(11), 6569-6573. https://doi.org/10.1063/1.360477

Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer). / Thomas, R. J.; Rockwell, Benjamin; Chandrasekhar, H. R.; Chandrasekhar, Meera; Ramdas, A. K.; Kobayashi, Masakazu; Gunshor, R. L.

In: Journal of Applied Physics, Vol. 78, No. 11, 1995, p. 6569-6573.

Research output: Contribution to journalArticle

Thomas, RJ, Rockwell, B, Chandrasekhar, HR, Chandrasekhar, M, Ramdas, AK, Kobayashi, M & Gunshor, RL 1995, 'Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)', Journal of Applied Physics, vol. 78, no. 11, pp. 6569-6573. https://doi.org/10.1063/1.360477
Thomas RJ, Rockwell B, Chandrasekhar HR, Chandrasekhar M, Ramdas AK, Kobayashi M et al. Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer). Journal of Applied Physics. 1995;78(11):6569-6573. https://doi.org/10.1063/1.360477
Thomas, R. J. ; Rockwell, Benjamin ; Chandrasekhar, H. R. ; Chandrasekhar, Meera ; Ramdas, A. K. ; Kobayashi, Masakazu ; Gunshor, R. L. / Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer). In: Journal of Applied Physics. 1995 ; Vol. 78, No. 11. pp. 6569-6573.
@article{010d22e797be4f8db9a8dbab064797d8,
title = "Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)",
abstract = "A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.",
author = "Thomas, {R. J.} and Benjamin Rockwell and Chandrasekhar, {H. R.} and Meera Chandrasekhar and Ramdas, {A. K.} and Masakazu Kobayashi and Gunshor, {R. L.}",
year = "1995",
doi = "10.1063/1.360477",
language = "English",
volume = "78",
pages = "6569--6573",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

AU - Thomas, R. J.

AU - Rockwell, Benjamin

AU - Chandrasekhar, H. R.

AU - Chandrasekhar, Meera

AU - Ramdas, A. K.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

PY - 1995

Y1 - 1995

N2 - A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

AB - A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0010397388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0010397388&partnerID=8YFLogxK

U2 - 10.1063/1.360477

DO - 10.1063/1.360477

M3 - Article

VL - 78

SP - 6569

EP - 6573

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -