Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas; Benjamin Rockwell; H. R. Chandrasekhar; Meera Chandrasekhar; A. K. Ramdas; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.360477

Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas^*, Benjamin Rockwell, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, M. Kobayashi, R. L. Gunshor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

Original language	English
Pages (from-to)	6569-6573
Number of pages	5
Journal	Journal of Applied Physics
Volume	78
Issue number	11
DOIs	https://doi.org/10.1063/1.360477
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.360477

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title = "Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)",

abstract = "A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.",

author = "Thomas, {R. J.} and Benjamin Rockwell and Chandrasekhar, {H. R.} and Meera Chandrasekhar and Ramdas, {A. K.} and M. Kobayashi and Gunshor, {R. L.}",

year = "1995",

doi = "10.1063/1.360477",

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volume = "78",

pages = "6569--6573",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

AU - Thomas, R. J.

AU - Rockwell, Benjamin

AU - Chandrasekhar, H. R.

AU - Chandrasekhar, Meera

AU - Ramdas, A. K.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1995

Y1 - 1995

N2 - A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

AB - A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

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UR - http://www.scopus.com/inward/citedby.url?scp=0010397388&partnerID=8YFLogxK

U2 - 10.1063/1.360477

DO - 10.1063/1.360477

M3 - Article

AN - SCOPUS:0010397388

SN - 0021-8979

VL - 78

SP - 6569

EP - 6573

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

Abstract

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