Temperature dependence of the band gap in InAsyP1-y

M. Wada, S. Araki, T. Kudou, T. Umezawa, S. Nakajima, T. Ueda

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Abstract

The temperature dependence of the band gap in InAsyP1-y (y=0-0.67) has been determined by photoluminescence, x-ray diffraction, and absorption spectra measurements. We found that the measured data within the temperature range of 77-300 K can be expressed by the equation proposed by O'Donnell and Chen. The band gap at 77 K is given by Eg = 1.407 - 1.073y + 0.089y2, while the compositional dependence of the band gap observed at 300 K, agrees with the values previously reported. We confirmed that changes in temperature caused a slight change in the bowing parameters, and hence found that the band gap temperature dependence of InAsyP1-y (y=0-1) varies very little with changes in composition (2.5-3.5 × 10-4 eV/K).

Original languageEnglish
Pages (from-to)2722-2724
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number19
Publication statusPublished - 2000 May 8
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wada, M., Araki, S., Kudou, T., Umezawa, T., Nakajima, S., & Ueda, T. (2000). Temperature dependence of the band gap in InAsyP1-y Applied Physics Letters, 76(19), 2722-2724.