Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2

Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki, Hiroyuki Nishikawa

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13-280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.

    Original languageEnglish
    Pages (from-to)1590-1593
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume59
    Issue number3
    Publication statusPublished - 1999

    Fingerprint

    Photoluminescence
    Oxygen
    photoluminescence
    life (durability)
    temperature dependence
    oxygen
    Temperature
    decay
    Silicon Dioxide
    diagrams
    Silica
    silicon dioxide
    Defects
    temperature
    defects
    configurations
    excitation
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2 . / Seol, Kwang Soo; Fujimaki, Makoto; Ohki, Yoshimichi; Nishikawa, Hiroyuki.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 59, No. 3, 1999, p. 1590-1593.

    Research output: Contribution to journalArticle

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    AU - Nishikawa, Hiroyuki

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