Abstract
The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13–280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.
| Original language | English |
|---|---|
| Pages (from-to) | 1590-1593 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 59 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics