Temperature dependence of the lifetime of 4.3-ev photoluminescence in oxygen-deficient amorphous (formula presented)

Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13–280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.

Original languageEnglish
Pages (from-to)1590-1593
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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