Abstract
The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13-280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.
| Original language | English |
|---|---|
| Pages (from-to) | 1590-1593 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 59 |
| Issue number | 3 |
| Publication status | Published - 1999 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2 . / Seol, Kwang Soo; Fujimaki, Makoto; Ohki, Yoshimichi; Nishikawa, Hiroyuki.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 59, No. 3, 1999, p. 1590-1593.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2
AU - Seol, Kwang Soo
AU - Fujimaki, Makoto
AU - Ohki, Yoshimichi
AU - Nishikawa, Hiroyuki
PY - 1999
Y1 - 1999
N2 - The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13-280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.
AB - The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13-280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.
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UR - http://www.scopus.com/inward/citedby.url?scp=0012307062&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0012307062
VL - 59
SP - 1590
EP - 1593
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
ER -