TY - JOUR
T1 - Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition
AU - Kizuka, Hinako
AU - Yagi, Takashi
AU - Jia, Junjun
AU - Yamashita, Yuichiro
AU - Nakamura, Shinichi
AU - Taketoshi, Naoyuki
AU - Shigesato, Yuzo
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015
Y1 - 2015
N2 - Thermal conductivity of a 300-nm-thick VO2thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2and Mo/VO2/Mo films with a VO2thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2films were deposited by reactive rf magnetron sputtering using a V2O3target and an Ar-O2mixture gas at 645K. The VO2films consisted of single phase VO2as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2film decreased abruptly from 6.3 × 10-1to 5.3 × 10-4Ωcm across the TMITof around 325-340K. The thermal conductivity of the VO2film increased from 3.6 to 5.4W m-1K-1across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.
AB - Thermal conductivity of a 300-nm-thick VO2thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2and Mo/VO2/Mo films with a VO2thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2films were deposited by reactive rf magnetron sputtering using a V2O3target and an Ar-O2mixture gas at 645K. The VO2films consisted of single phase VO2as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2film decreased abruptly from 6.3 × 10-1to 5.3 × 10-4Ωcm across the TMITof around 325-340K. The thermal conductivity of the VO2film increased from 3.6 to 5.4W m-1K-1across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.
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U2 - 10.7567/JJAP.54.053201
DO - 10.7567/JJAP.54.053201
M3 - Article
AN - SCOPUS:84983082039
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
M1 - e053201
ER -