Temperature dependent DC and RF performance of diamond MESFET

H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki, Toshiki Makimoto

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This paper reports the first studies on temperature dependent DC and RF characteristics of diamond metal-semiconductor field-effect transistors along with circular-transmission-line-method measurements on hydrogen-terminated diamond surface. In general, the device under study is thermally stable up to 100 °C as it does not deteriorate at higher temperatures with the cut-off frequency for current gain maintained at 8∼9 GHz. It is found that the sheet resistance is almost totally independent of temperature, contact resistance is negligible, and channel conductance underneath the gate decreases with increasing temperature. The threshold voltage for the device is found to shift to the negative side with increasing temperature. A small-signal equivalent circuit analysis reveals that both transconductance and gate-source capacitance decrease with increasing temperature, which results in the almost constant cut-off frequency for current gain. The experimental results can be explained by the fact that with increasing temperature, the band near the Al/H-terminated diamond surface bends upward more weakly, which leads to a decrease of buffer capacitance. At the same time the mobility decreases and the transconductance therefore decreases.

Original languageEnglish
Pages (from-to)787-791
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number4-8
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

Fingerprint

Diamond
Diamonds
field effect transistors
direct current
diamonds
transconductance
Temperature
Cutoff frequency
Transconductance
temperature
cut-off
capacitance
Capacitance
MESFET devices
contact resistance
equivalent circuits
Sheet resistance
threshold voltage
transmission lines
Contact resistance

Keywords

  • Diamond
  • MESFET
  • RF
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Temperature dependent DC and RF performance of diamond MESFET. / Ye, H.; Kasu, M.; Ueda, K.; Yamauchi, Y.; Maeda, N.; Sasaki, S.; Makimoto, Toshiki.

In: Diamond and Related Materials, Vol. 15, No. 4-8, 04.2006, p. 787-791.

Research output: Contribution to journalArticle

Ye, H, Kasu, M, Ueda, K, Yamauchi, Y, Maeda, N, Sasaki, S & Makimoto, T 2006, 'Temperature dependent DC and RF performance of diamond MESFET', Diamond and Related Materials, vol. 15, no. 4-8, pp. 787-791. https://doi.org/10.1016/j.diamond.2006.01.002
Ye, H. ; Kasu, M. ; Ueda, K. ; Yamauchi, Y. ; Maeda, N. ; Sasaki, S. ; Makimoto, Toshiki. / Temperature dependent DC and RF performance of diamond MESFET. In: Diamond and Related Materials. 2006 ; Vol. 15, No. 4-8. pp. 787-791.
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AU - Makimoto, Toshiki

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