Temperature-dependent electronic structure of Nd1-xSmxNiO3

K. Okazaki, T. Mizokawa, A. Fujimori, E. V. Sampathkumaran, J. A. Alonso

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

RNiO3 (R: rare earth) is one of the typical bandwidth-control metal-insulator transition systems. Its metal-insulator transition temperature (TMI) is the same as the antiferromagnetic transition temperature (TN) for R = Pr and Nd, while TMI is higher than TN for R = Sm and Eu. The boundary between the two types of phase transitions is located between NdNiO3 and SmNiO3. We have measured photoemission spectra of Nd1-xSmxNiO3 at various temperatures above and below TMI. The spectra show quite different temperature dependences between x ≤ 0.4 and x ≥ 0.6. For x ≤ 0.4, the spectral intensity near the Fermi level (EF) is temperature-dependent even well below TMI, while for x ≥ 0.6 it shows a significant temperature dependence only near TMI. Also, the spectra near EF above TMI show a pseudo-gap like behavior for x ≥ 0.6. From these results, we conclude that the metallic phase has different natures between x ≤ 0.4 and x ≥ 0.6.

Original languageEnglish
Pages (from-to)975-978
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume63
Issue number6-8
DOIs
Publication statusPublished - 2002 Jan 1

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Keywords

  • A. Oxides
  • C. Photoelectron spectroscopy
  • D. Electronic structure
  • D. Phase transitions

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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