Temperature-dependent localized excitations of doped carriers in superconducting diamond

K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

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Abstract

Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (∼150meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.

Original languageEnglish
Article number166402
JournalPhysical Review Letters
Volume100
Issue number16
DOIs
Publication statusPublished - 2008 Apr 25

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ishizaka, K., Eguchi, R., Tsuda, S., Chainani, A., Yokoya, T., Kiss, T., Shimojima, T., Togashi, T., Watanabe, S., Chen, C. T., Takano, Y., Nagao, M., Sakaguchi, I., Takenouchi, T., Kawarada, H., & Shin, S. (2008). Temperature-dependent localized excitations of doped carriers in superconducting diamond. Physical Review Letters, 100(16), [166402]. https://doi.org/10.1103/PhysRevLett.100.166402