Temporary SiC-SiC wafer bonding compatible with high temperature annealing

Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.

Original languageEnglish
Title of host publicationProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages989-994
Number of pages6
ISBN (Electronic)9781728114989
DOIs
Publication statusPublished - 2019 May 1
Event69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, United States
Duration: 2019 May 282019 May 31

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2019-May
ISSN (Print)0569-5503

Conference

Conference69th IEEE Electronic Components and Technology Conference, ECTC 2019
CountryUnited States
CityLas Vegas
Period19/5/2819/5/31

Keywords

  • Interface
  • SiC
  • Temporary
  • Thin SiC device
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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