Temporary SiC-SiC wafer bonding compatible with high temperature annealing

Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.

Original languageEnglish
Title of host publicationProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages989-994
Number of pages6
ISBN (Electronic)9781728114989
DOIs
Publication statusPublished - 2019 May 1
Event69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, United States
Duration: 2019 May 282019 May 31

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2019-May
ISSN (Print)0569-5503

Conference

Conference69th IEEE Electronic Components and Technology Conference, ECTC 2019
CountryUnited States
CityLas Vegas
Period19/5/2819/5/31

Fingerprint

Wafer bonding
Annealing
Rapid thermal annealing
Temperature
Fabrication

Keywords

  • Interface
  • SiC
  • Temporary
  • Thin SiC device
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Mu, F., Suga, T., Uomoto, M., & Shimatsu, T. (2019). Temporary SiC-SiC wafer bonding compatible with high temperature annealing. In Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019 (pp. 989-994). [8811140] (Proceedings - Electronic Components and Technology Conference; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2019.00155

Temporary SiC-SiC wafer bonding compatible with high temperature annealing. / Mu, Fengwen; Suga, Tadatomo; Uomoto, Miyuki; Shimatsu, Takehito.

Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 989-994 8811140 (Proceedings - Electronic Components and Technology Conference; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Suga, T, Uomoto, M & Shimatsu, T 2019, Temporary SiC-SiC wafer bonding compatible with high temperature annealing. in Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019., 8811140, Proceedings - Electronic Components and Technology Conference, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 989-994, 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States, 19/5/28. https://doi.org/10.1109/ECTC.2019.00155
Mu F, Suga T, Uomoto M, Shimatsu T. Temporary SiC-SiC wafer bonding compatible with high temperature annealing. In Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 989-994. 8811140. (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2019.00155
Mu, Fengwen ; Suga, Tadatomo ; Uomoto, Miyuki ; Shimatsu, Takehito. / Temporary SiC-SiC wafer bonding compatible with high temperature annealing. Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 989-994 (Proceedings - Electronic Components and Technology Conference).
@inproceedings{696c22065bbc44ba97a8e6e9bd4bde9e,
title = "Temporary SiC-SiC wafer bonding compatible with high temperature annealing",
abstract = "A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.",
keywords = "Interface, SiC, Temporary, Thin SiC device, Wafer bonding",
author = "Fengwen Mu and Tadatomo Suga and Miyuki Uomoto and Takehito Shimatsu",
year = "2019",
month = "5",
day = "1",
doi = "10.1109/ECTC.2019.00155",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "989--994",
booktitle = "Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019",

}

TY - GEN

T1 - Temporary SiC-SiC wafer bonding compatible with high temperature annealing

AU - Mu, Fengwen

AU - Suga, Tadatomo

AU - Uomoto, Miyuki

AU - Shimatsu, Takehito

PY - 2019/5/1

Y1 - 2019/5/1

N2 - A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.

AB - A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.

KW - Interface

KW - SiC

KW - Temporary

KW - Thin SiC device

KW - Wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=85072281487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072281487&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2019.00155

DO - 10.1109/ECTC.2019.00155

M3 - Conference contribution

AN - SCOPUS:85072281487

T3 - Proceedings - Electronic Components and Technology Conference

SP - 989

EP - 994

BT - Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -