Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene

Yukuya Nagai, Asahi Okawa, Taisuke Minamide, Kei Hasegawa, Hisashi Sugime, Suguru Noda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial copper (Cu) films yield graphene with superior quality but at high cost. We report 1-3 μm thick epitaxial Cu films prepared on c plane sapphire substrates in 10-30 s, which is much faster than that of the typical sputtering method. Such rapid deposition is realized by vapor deposition using a Cu source heated to 1700-1800 °C, which is much higher than its melting point of 1085 °C. Continuous graphene films, either bilayer or single-layer, are obtained on the epitaxial Cu by chemical vapor deposition and transferred to carrier substrates. The sapphire substrates can be reused five to six times maintaining the quality of the epitaxial Cu films and graphene. The mechanisms and requirements are discussed for such quick epitaxy of Cu on reused sapphire, which will enable high-quality graphene production at lower cost.

Original languageEnglish
Pages (from-to)3354-3362
Number of pages9
JournalACS Omega
Volume2
Issue number7
DOIs
Publication statusPublished - 2017 Jul 31

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Graphite
Aluminum Oxide
Epitaxial growth
Sapphire
Graphene
Substrates
Vapor deposition
Sputtering
Melting point
Costs
Copper
Chemical vapor deposition

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene. / Nagai, Yukuya; Okawa, Asahi; Minamide, Taisuke; Hasegawa, Kei; Sugime, Hisashi; Noda, Suguru.

In: ACS Omega, Vol. 2, No. 7, 31.07.2017, p. 3354-3362.

Research output: Contribution to journalArticle

Nagai, Yukuya ; Okawa, Asahi ; Minamide, Taisuke ; Hasegawa, Kei ; Sugime, Hisashi ; Noda, Suguru. / Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene. In: ACS Omega. 2017 ; Vol. 2, No. 7. pp. 3354-3362.
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