Tensor evaluation of anisotropic stress relaxation in mesa-shaped sige layer on si substrate by electron back-scattering pattern measurement: Comparison between raman measurement and finite element method simulation

Motohiro Tomita, Masaya Nagasaka, Daisuke Kosemura, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of the SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into a nanostructure. In this study, we evaluated the anisotropic stress relaxation in mesa-shaped strained SiGe layers on a Si substrate by electron backscattering pattern (EBSP) measurement. Moreover, we compared the results of EBSP measurement with those of anisotropic Raman measurement and finite element method (FEM) simulation. As a result, the anisotropic stress relaxation obtained by Raman spectroscopy was confirmed by EBSP measurement. Additionally, we obtained a good correlation between the results of EBSP measurement and FEM simulation. The xx and yy stresses were markedly relaxed and the zz and xz stresses were concentrated at the SiGe layer edges. These stresses were mostly relaxed in the distance range from the SiGe layer edges to 200 nm. Therefore, in a SiGe nanostructure with a scale of less than 200 nm, stress relaxation is inevitable. The results of EBSP and Raman measurements, and FEM simulation show a common tendency. We believe that EBSP measurement is useful for the evaluation of stress tensors and is complementary to Raman measurement.

Original languageEnglish
Article number04CA06
JournalJapanese Journal of Applied Physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr 1
Externally publishedYes

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stress relaxation
mesas
Stress relaxation
Tensors
finite element method
Backscattering
tensors
Scattering
Finite element method
backscattering
Electrons
evaluation
Substrates
scattering
electrons
simulation
Nanostructures
stress tensors
Raman spectroscopy
Transistors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tensor evaluation of anisotropic stress relaxation in mesa-shaped sige layer on si substrate by electron back-scattering pattern measurement : Comparison between raman measurement and finite element method simulation. / Tomita, Motohiro; Nagasaka, Masaya; Kosemura, Daisuke; Usuda, Koji; Tezuka, Tsutomu; Ogura, Atsushi.

In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CA06, 01.04.2013.

Research output: Contribution to journalArticle

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