Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate

Motohiro Tomita, D. Kosemura, K. Usuda, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages207-214
Number of pages8
Volume53
Edition1
DOIs
Publication statusPublished - 2013 Oct 21
Externally publishedYes
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 17

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/17

Fingerprint

Stress relaxation
Tensors
Nanostructures
Scattering
Raman spectroscopy
Electrons
Substrates
Finite element method
Shear stress
Transistors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tomita, M., Kosemura, D., Usuda, K., & Ogura, A. (2013). Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate. In Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5 (1 ed., Vol. 53, pp. 207-214) https://doi.org/10.1149/05301.0207ecst

Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate. / Tomita, Motohiro; Kosemura, D.; Usuda, K.; Ogura, A.

Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. Vol. 53 1. ed. 2013. p. 207-214.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tomita, M, Kosemura, D, Usuda, K & Ogura, A 2013, Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate. in Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. 1 edn, vol. 53, pp. 207-214, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting, Toronto, ON, Canada, 13/5/12. https://doi.org/10.1149/05301.0207ecst
Tomita M, Kosemura D, Usuda K, Ogura A. Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate. In Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. 1 ed. Vol. 53. 2013. p. 207-214 https://doi.org/10.1149/05301.0207ecst
Tomita, Motohiro ; Kosemura, D. ; Usuda, K. ; Ogura, A. / Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate. Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. Vol. 53 1. ed. 2013. pp. 207-214
@inproceedings{457bf437635f4f57b5e37cb200fd7683,
title = "Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate",
abstract = "A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.",
author = "Motohiro Tomita and D. Kosemura and K. Usuda and A. Ogura",
year = "2013",
month = "10",
day = "21",
doi = "10.1149/05301.0207ecst",
language = "English",
isbn = "9781607683742",
volume = "53",
pages = "207--214",
booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5",
edition = "1",

}

TY - GEN

T1 - Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate

AU - Tomita, Motohiro

AU - Kosemura, D.

AU - Usuda, K.

AU - Ogura, A.

PY - 2013/10/21

Y1 - 2013/10/21

N2 - A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.

AB - A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84885650224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885650224&partnerID=8YFLogxK

U2 - 10.1149/05301.0207ecst

DO - 10.1149/05301.0207ecst

M3 - Conference contribution

AN - SCOPUS:84885650224

SN - 9781607683742

VL - 53

SP - 207

EP - 214

BT - Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5

ER -