Texture of thin silicon films deposited from Si2Cl6

Y. Kato, N. Saito, Akio Fuwa

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Thin Silicon films were deposited on non-crystal quartz glass substrates by hydrogen reduction of Si2Cl6 at temperatures from 650 to 900 °C in a horizontal hot wall reactor. The microstructures of the thin silicon films deposited under various experimental conditions were analyzed. The thin silicon films deposited from 750 to 850 °C have the highest degree of preferred (220) plane orientation with the 〈111〉 direction along the plane, and the cross-sectional morphology exhibits a columnar structure. The experimental values of the lattice spacing approach a value cited in JCPDS for the films deposited in a higher temperature range. In the lower temperature range the morphology of surface is flat and smooth, and in the higher temperature range the surface becomes uneven remarkably.

    Original languageEnglish
    Pages (from-to)744-750
    Number of pages7
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume60
    Issue number8
    Publication statusPublished - 1996 Aug

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    Silicon
    silicon films
    textures
    Textures
    Temperature
    Quartz
    flat surfaces
    quartz
    reactors
    spacing
    Hydrogen
    microstructure
    glass
    hydrogen
    Glass
    Microstructure
    Substrates
    temperature

    ASJC Scopus subject areas

    • Metals and Alloys

    Cite this

    Texture of thin silicon films deposited from Si2Cl6. / Kato, Y.; Saito, N.; Fuwa, Akio.

    In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 60, No. 8, 08.1996, p. 744-750.

    Research output: Contribution to journalArticle

    Kato, Y. ; Saito, N. ; Fuwa, Akio. / Texture of thin silicon films deposited from Si2Cl6. In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals. 1996 ; Vol. 60, No. 8. pp. 744-750.
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