The 1200 nm-Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Yu Hiraishi, Tomohiro Shirai, Jinkwan Kwoen, Taisei Ito, Yuichi Matsushima, Hiroshi Ishikawa, Yasuhiko Arakawa, Katsuyuki Utaka

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm-band InAs/InAlGaAs QD is applied to 1200 nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP-RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP-RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross-sectional image analyses by scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.

Original languageEnglish
Article number1900851
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume217
Issue number10
DOIs
Publication statusPublished - 2020 May 1

Keywords

  • InAs/GaAs quantum dots
  • intermixing
  • ion implantation
  • rapid thermal annealing
  • reactive ion etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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