The characterization of SiC hot-implanted with Ga+

Y. Tanaka, Naoto Kobayashi, M. Hasegawa, S. Yoshida, Y. Ishida, T. Nishijima, N. Hayashi

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Abstract

In this study, we investigated the effect of the hot and multiple energy implantation technique for Ga+ ions in 3C-, 6H- and 4H-SiC substrates by Rutherford backscattering spectrometry and channeling technique (RBS-C). We found that the layers implanted at 500°C exhibit a good crystalline quality in spite of the presence of some residual defects originating from the implantation-induced damages and a large percentage of Ga atoms were observed to occupy the substitutional lattice sites independent of the polytype. This tendency becomes more pronounced by using the multiple energy implantation technique.

Original languageEnglish
Pages (from-to)713-716
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
Publication statusPublished - 1998
Externally publishedYes

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Keywords

  • Gallium
  • Hot Implantation
  • RBS/Channeling
  • Recrystallization

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Tanaka, Y., Kobayashi, N., Hasegawa, M., Yoshida, S., Ishida, Y., Nishijima, T., & Hayashi, N. (1998). The characterization of SiC hot-implanted with Ga+ Materials Science Forum, 264-268(PART 2), 713-716.