The Chemical Vapor Deposition of Polycrystalline InP

Masahide Inuishi; Bruce W. Wessels

doi:10.1149/1.2129584

The Chemical Vapor Deposition of Polycrystalline InP

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2747-2750
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	127
Issue number	12
DOIs	https://doi.org/10.1149/1.2129584
Publication status	Published - 1980 Dec
Externally published	Yes

Keywords

polycrystalline semiconductors
thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2129584

Cite this

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title = "The Chemical Vapor Deposition of Polycrystalline InP",

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author = "Masahide Inuishi and Wessels, {Bruce W.}",

year = "1980",

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doi = "10.1149/1.2129584",

language = "English",

volume = "127",

pages = "2747--2750",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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T1 - The Chemical Vapor Deposition of Polycrystalline InP

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AU - Wessels, Bruce W.

PY - 1980/12

Y1 - 1980/12

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KW - thin films

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

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The Chemical Vapor Deposition of Polycrystalline InP

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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Cite this