The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

Original languageEnglish
Article number6348369
Pages (from-to)82-83
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
Publication statusPublished - 2012 Dec 11
Externally publishedYes
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 2012 Oct 72012 Oct 10

Keywords

  • highly stacking
  • quantum dot
  • semiconductor laser
  • strain-compensation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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