The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Pages82-83
Number of pages2
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 2012 Oct 72012 Oct 10

Other

Other23rd IEEE International Semiconductor Laser Conference, ISLC 2012
CountryUnited States
CitySan Diego, CA
Period12/10/712/10/10

Fingerprint

Quantum dot lasers
Semiconductor quantum dots
Semiconductor lasers
semiconductor lasers
quantum dots
Temperature
temperature
Compensation and Redress

Keywords

  • highly stacking
  • quantum dot
  • semiconductor laser
  • strain-compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Conference Digest - IEEE International Semiconductor Laser Conference. 2012. p. 82-83 6348369.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2012, The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. in Conference Digest - IEEE International Semiconductor Laser Conference., 6348369, pp. 82-83, 23rd IEEE International Semiconductor Laser Conference, ISLC 2012, San Diego, CA, United States, 12/10/7. https://doi.org/10.1109/ISLC.2012.6348369
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. Conference Digest - IEEE International Semiconductor Laser Conference. 2012. pp. 82-83
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