The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters

Shingo Makishima, Kazuki Fujimoto, Keiichiro Kondo

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The only and the direct benefit by the loss reduction on SiC-SBD devices are studied in this paper. The loss of the Si-IGBT and SiC -SBD hybrid module type traction inverter for DC.600V tram car is calculated in this paper. The benefits of mass reduction and less dimensions of cooling system of the inverter are studied, compared with the case of Si-IGBT and Si-diode, and with the case of GTO and Si-diode. The thermal characteristics of the Si-IGBT and SiC -SBD hybrid module inverter are examined by the actual train operation.

    Original languageEnglish
    Title of host publication2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages2047-2050
    Number of pages4
    ISBN (Electronic)9784886864055
    DOIs
    Publication statusPublished - 2018 Oct 22
    Event8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 - Niigata, Japan
    Duration: 2018 May 202018 May 24

    Other

    Other8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
    CountryJapan
    CityNiigata
    Period18/5/2018/5/24

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters'. Together they form a unique fingerprint.

  • Cite this

    Makishima, S., Fujimoto, K., & Kondo, K. (2018). The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. In 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 (pp. 2047-2050). [8507944] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IPEC.2018.8507944