The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI

Yoko Ishibashi, Takahiro Akiyoshi, Jason Komadina, Yasuhiro Fukunaka, Takayuki Homma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Si nanopillars were prepared by electrodeposition from SiCl 4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages117-126
    Number of pages10
    Volume50
    Edition48
    DOIs
    Publication statusPublished - 2012

    Fingerprint

    Electrodeposition
    Nanoimprint lithography
    Ionic liquids
    Temperature
    Substrates

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Ishibashi, Y., Akiyoshi, T., Komadina, J., Fukunaka, Y., & Homma, T. (2012). The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI. In ECS Transactions (48 ed., Vol. 50, pp. 117-126) https://doi.org/10.1149/05048.0117ecst

    The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI. / Ishibashi, Yoko; Akiyoshi, Takahiro; Komadina, Jason; Fukunaka, Yasuhiro; Homma, Takayuki.

    ECS Transactions. Vol. 50 48. ed. 2012. p. 117-126.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Ishibashi, Y, Akiyoshi, T, Komadina, J, Fukunaka, Y & Homma, T 2012, The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI. in ECS Transactions. 48 edn, vol. 50, pp. 117-126. https://doi.org/10.1149/05048.0117ecst
    Ishibashi Y, Akiyoshi T, Komadina J, Fukunaka Y, Homma T. The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI. In ECS Transactions. 48 ed. Vol. 50. 2012. p. 117-126 https://doi.org/10.1149/05048.0117ecst
    Ishibashi, Yoko ; Akiyoshi, Takahiro ; Komadina, Jason ; Fukunaka, Yasuhiro ; Homma, Takayuki. / The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI. ECS Transactions. Vol. 50 48. ed. 2012. pp. 117-126
    @inproceedings{7bd76902e0774eeda99819a8b1c5fcd0,
    title = "The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI",
    abstract = "Si nanopillars were prepared by electrodeposition from SiCl 4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.",
    author = "Yoko Ishibashi and Takahiro Akiyoshi and Jason Komadina and Yasuhiro Fukunaka and Takayuki Homma",
    year = "2012",
    doi = "10.1149/05048.0117ecst",
    language = "English",
    volume = "50",
    pages = "117--126",
    booktitle = "ECS Transactions",
    edition = "48",

    }

    TY - GEN

    T1 - The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI

    AU - Ishibashi, Yoko

    AU - Akiyoshi, Takahiro

    AU - Komadina, Jason

    AU - Fukunaka, Yasuhiro

    AU - Homma, Takayuki

    PY - 2012

    Y1 - 2012

    N2 - Si nanopillars were prepared by electrodeposition from SiCl 4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.

    AB - Si nanopillars were prepared by electrodeposition from SiCl 4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.

    UR - http://www.scopus.com/inward/record.url?scp=84885822377&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84885822377&partnerID=8YFLogxK

    U2 - 10.1149/05048.0117ecst

    DO - 10.1149/05048.0117ecst

    M3 - Conference contribution

    AN - SCOPUS:84885822377

    VL - 50

    SP - 117

    EP - 126

    BT - ECS Transactions

    ER -