The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p+ polysilicon gate

Akihiko Yasuoka*, Takashi Kuroi, Satoshi Shimizu, Masayoshi Shirahata, Yoshinori Okumura, Yasuo Inoue, Masahide Inuishi, Tadashi Nishimura, Hirokazu Miyoshi

*Corresponding author for this work

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