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The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p+ polysilicon gate
Akihiko Yasuoka*, Takashi Kuroi, Satoshi Shimizu, Masayoshi Shirahata, Yoshinori Okumura, Yasuo Inoue, Masahide Inuishi, Tadashi Nishimura, Hirokazu Miyoshi
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
9
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(Scopus)