The frequency switchable multi-layered BST/BaTiO3 epitaxial film resonator

Takahiro Shimidzu; Takahiko Yanagitani; Kiyotaka Wasa

doi:10.1109/ULTSYM.2017.8092735

The frequency switchable multi-layered BST/BaTiO₃ epitaxial film resonator

Takahiro Shimidzu, Takahiko Yanagitani, Kiyotaka Wasa

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO₃, to two-layered BST/BaTiO₃ epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.

Original language	English
Title of host publication	2017 IEEE International Ultrasonics Symposium, IUS 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538633830
DOIs	https://doi.org/10.1109/ULTSYM.2017.8092735
Publication status	Published - 2017 Oct 31
Event	2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: 2017 Sep 6 → 2017 Sep 9

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Other

Other	2017 IEEE International Ultrasonics Symposium, IUS 2017
Country/Territory	United States
City	Washington
Period	17/9/6 → 17/9/9

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2017.8092735

Cite this

Shimidzu, T, Yanagitani, T & Wasa, K 2017, The frequency switchable multi-layered BST/BaTiO₃ epitaxial film resonator. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092735, IEEE International Ultrasonics Symposium, IUS, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092735

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title = "The frequency switchable multi-layered BST/BaTiO3 epitaxial film resonator",

abstract = "Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO3, to two-layered BST/BaTiO3 epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.",

author = "Takahiro Shimidzu and Takahiko Yanagitani and Kiyotaka Wasa",

note = "Funding Information: This work was supported by JST PRESTO (No. JPMJPR16R8) and KAKENHI (Giant-in-Aid for Scientific Research (B), No16H04356). Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Ultrasonics Symposium, IUS 2017 ; Conference date: 06-09-2017 Through 09-09-2017",

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N2 - Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO3, to two-layered BST/BaTiO3 epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.

AB - Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO3, to two-layered BST/BaTiO3 epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.

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