The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages567-571
Number of pages5
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 2017 Jun 252017 Jun 30

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period17/6/2517/6/30

Keywords

  • AgGaTe
  • Chalcopyrite
  • Closed space sublimation
  • J-V characteristic
  • Phase diagram

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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