The growth of AgGaTe 2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-6
Number of pages6
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 2017 Jun 252017 Jun 30

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period17/6/2517/6/30

Keywords

  • AgGaTe
  • Chalcopyrite
  • Closed space sublimation
  • J-V characteristic
  • Phase diagram

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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