The growth of AgGaTe                         2                          layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno; Masakazu Kobayashi

doi:10.1109/PVSC.2017.8366048

The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The AgGaTe ₂ layer was formed on Ag ₂ Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga ₂ Te ₃ source material into the Ag ₂ Te layer and formation of the AgGaTe ₂ layer were both occurring during the growth when Ag ₂ Te and Ga ₂ Te ₃ source mixture was used to form AgGaTe ₂ . It was also clear the AgGaTe ₂ could be formed by deposition and annealing of Ga ₂ Te ₃ layer on top of the Ag ₂ Te/Si structure. Solar cells were fabricated using the p-AgGaTe ₂ /n-Si heterojunction, and showed conversion efficiency of approximately 3%.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366048
Publication status	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 2017 Jun 25 → 2017 Jun 30

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	17/6/25 → 17/6/30

Keywords

AgGaTe
Chalcopyrite
Closed space sublimation
J-V characteristic
Phase diagram

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2017.8366048

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Cite this

Uruno, A., & Kobayashi, M. (2017). The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-6). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366048

The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications . / Uruno, Aya; Kobayashi, Masakazu.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uruno, A & Kobayashi, M 2017, The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 17/6/25. https://doi.org/10.1109/PVSC.2017.8366048

Uruno A, Kobayashi M. The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-6. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). https://doi.org/10.1109/PVSC.2017.8366048

Uruno, Aya ; Kobayashi, Masakazu. / The growth of AgGaTe ₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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title = " The growth of AgGaTe 2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications ",

abstract = " The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%. ",

keywords = "AgGaTe, Chalcopyrite, Closed space sublimation, J-V characteristic, Phase diagram",

author = "Aya Uruno and Masakazu Kobayashi",

note = "Funding Information: This work was supported in part by Waseda University Research Initiatives, by Waseda University Grant for Special Research Projects, and by JSPS Research Fellowships for Young Scientists. Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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N2 - The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%.

AB - The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%.

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