TY - GEN
T1 - The growth of AgGaTe 2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
AU - Uruno, Aya
AU - Kobayashi, Masakazu
N1 - Funding Information:
This work was supported in part by Waseda University Research Initiatives, by Waseda University Grant for Special Research Projects, and by JSPS Research Fellowships for Young Scientists.
Publisher Copyright:
© 2017 IEEE.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%.
AB - The AgGaTe 2 layer was formed on Ag 2 Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga 2 Te 3 source material into the Ag 2 Te layer and formation of the AgGaTe 2 layer were both occurring during the growth when Ag 2 Te and Ga 2 Te 3 source mixture was used to form AgGaTe 2 . It was also clear the AgGaTe 2 could be formed by deposition and annealing of Ga 2 Te 3 layer on top of the Ag 2 Te/Si structure. Solar cells were fabricated using the p-AgGaTe 2 /n-Si heterojunction, and showed conversion efficiency of approximately 3%.
KW - AgGaTe
KW - Chalcopyrite
KW - Closed space sublimation
KW - J-V characteristic
KW - Phase diagram
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U2 - 10.1109/PVSC.2017.8366048
DO - 10.1109/PVSC.2017.8366048
M3 - Conference contribution
AN - SCOPUS:85048472502
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1
EP - 6
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -