Abstract
The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 524-529 |
| Number of pages | 6 |
| Volume | 2016-November |
| ISBN (Electronic) | 9781509027248 |
| DOIs | |
| Publication status | Published - 2016 Nov 18 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 2016 Jun 5 → 2016 Jun 10 |
Other
| Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
|---|---|
| Country | United States |
| City | Portland |
| Period | 16/6/5 → 16/6/10 |
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Keywords
- AgGaTe
- chalcopyrite
- closed space sublimation
- J-V characteristic
- phase diagram
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. / Uruno, Aya; Kobayashi, Masakazu.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 524-529 7749649.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
AU - Uruno, Aya
AU - Kobayashi, Masakazu
PY - 2016/11/18
Y1 - 2016/11/18
N2 - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.
AB - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.
KW - AgGaTe
KW - chalcopyrite
KW - closed space sublimation
KW - J-V characteristic
KW - phase diagram
UR - http://www.scopus.com/inward/record.url?scp=85003587657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003587657&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7749649
DO - 10.1109/PVSC.2016.7749649
M3 - Conference contribution
AN - SCOPUS:85003587657
VL - 2016-November
SP - 524
EP - 529
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -