The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

    Original languageEnglish
    Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages524-529
    Number of pages6
    Volume2016-November
    ISBN (Electronic)9781509027248
    DOIs
    Publication statusPublished - 2016 Nov 18
    Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
    Duration: 2016 Jun 52016 Jun 10

    Other

    Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
    CountryUnited States
    CityPortland
    Period16/6/516/6/10

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    Keywords

    • AgGaTe
    • chalcopyrite
    • closed space sublimation
    • J-V characteristic
    • phase diagram

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering

    Cite this

    Uruno, A., & Kobayashi, M. (2016). The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 524-529). [7749649] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749649