The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno; Masakazu Kobayashi

doi:10.1109/PVSC.2016.7749649

The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The AgGaTe₂ layer was formed on Ag₂Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga₂Te₃ source material into the Ag₂Te layer and formation of the AgGaTe₂ layer were both occurring during the growth when Ag₂Te and Ga₂Te₃ source mixture was used to form AgGaTe₂. It was also clear the AgGaTe₂ could be formed by deposition and annealing of Ga₂Te₃ layer on top of the Ag₂Te/Si structure. Solar cells were fabricated using the p-AgGaTe₂/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	524-529
Number of pages	6
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749649
Publication status	Published - 2016 Nov 18
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 2016 Jun 5 → 2016 Jun 10

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country	United States
City	Portland
Period	16/6/5 → 16/6/10

Keywords

AgGaTe
J-V characteristic
chalcopyrite
closed space sublimation
phase diagram

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749649

Fingerprint Dive into the research topics of 'The growth of AgGaTe<sub>2</sub> layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications'. Together they form a unique fingerprint.

Cite this

Uruno, A., & Kobayashi, M. (2016). The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 524-529). [7749649] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749649

The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. / Uruno, Aya; Kobayashi, Masakazu.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 524-529 7749649 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uruno, A & Kobayashi, M 2016, The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749649, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 524-529, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 16/6/5. https://doi.org/10.1109/PVSC.2016.7749649

Uruno A, Kobayashi M. The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 524-529. 7749649. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2016.7749649

Uruno, Aya ; Kobayashi, Masakazu. / The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 524-529 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{63406f5c64414ad1ac4f84b0c7e930e4,

title = "The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications",

abstract = "The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.",

keywords = "AgGaTe, J-V characteristic, chalcopyrite, closed space sublimation, phase diagram",

author = "Aya Uruno and Masakazu Kobayashi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749649",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "524--529",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

}

TY - GEN

T1 - The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

AU - Uruno, Aya

AU - Kobayashi, Masakazu

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

AB - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

KW - AgGaTe

KW - J-V characteristic

KW - chalcopyrite

KW - closed space sublimation

KW - phase diagram

UR - http://www.scopus.com/inward/record.url?scp=85003587657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003587657&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749649

DO - 10.1109/PVSC.2016.7749649

M3 - Conference contribution

AN - SCOPUS:85003587657

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 524

EP - 529

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -