The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno; Masakazu Kobayashi

doi:10.1109/PVSC.2016.7749649

The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Aya Uruno, Masakazu Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The AgGaTe₂ layer was formed on Ag₂Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga₂Te₃ source material into the Ag₂Te layer and formation of the AgGaTe₂ layer were both occurring during the growth when Ag₂Te and Ga₂Te₃ source mixture was used to form AgGaTe₂. It was also clear the AgGaTe₂ could be formed by deposition and annealing of Ga₂Te₃ layer on top of the Ag₂Te/Si structure. Solar cells were fabricated using the p-AgGaTe₂/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	524-529
Number of pages	6
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749649
Publication status	Published - 2016 Nov 18
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 2016 Jun 5 → 2016 Jun 10

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country	United States
City	Portland
Period	16/6/5 → 16/6/10

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Keywords

AgGaTe
chalcopyrite
closed space sublimation
J-V characteristic
phase diagram

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

Uruno, A., & Kobayashi, M. (2016). The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 524-529). [7749649] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749649

The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. / Uruno, Aya; Kobayashi, Masakazu.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 524-529 7749649.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uruno, A & Kobayashi, M 2016, The growth of AgGaTe₂ layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749649, Institute of Electrical and Electronics Engineers Inc., pp. 524-529, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 16/6/5. https://doi.org/10.1109/PVSC.2016.7749649

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Access to Document

10.1109/PVSC.2016.7749649