The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

    Original languageEnglish
    Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages524-529
    Number of pages6
    Volume2016-November
    ISBN (Electronic)9781509027248
    DOIs
    Publication statusPublished - 2016 Nov 18
    Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
    Duration: 2016 Jun 52016 Jun 10

    Other

    Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
    CountryUnited States
    CityPortland
    Period16/6/516/6/10

    Fingerprint

    Sublimation
    Conversion efficiency
    Heterojunctions
    Etching
    Solar cells
    Annealing
    Fabrication
    Substrates

    Keywords

    • AgGaTe
    • chalcopyrite
    • closed space sublimation
    • J-V characteristic
    • phase diagram

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering

    Cite this

    Uruno, A., & Kobayashi, M. (2016). The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 524-529). [7749649] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749649

    The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. / Uruno, Aya; Kobayashi, Masakazu.

    2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 524-529 7749649.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Uruno, A & Kobayashi, M 2016, The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749649, Institute of Electrical and Electronics Engineers Inc., pp. 524-529, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 16/6/5. https://doi.org/10.1109/PVSC.2016.7749649
    Uruno A, Kobayashi M. The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 524-529. 7749649 https://doi.org/10.1109/PVSC.2016.7749649
    Uruno, Aya ; Kobayashi, Masakazu. / The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 524-529
    @inproceedings{63406f5c64414ad1ac4f84b0c7e930e4,
    title = "The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications",
    abstract = "The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3{\%}.",
    keywords = "AgGaTe, chalcopyrite, closed space sublimation, J-V characteristic, phase diagram",
    author = "Aya Uruno and Masakazu Kobayashi",
    year = "2016",
    month = "11",
    day = "18",
    doi = "10.1109/PVSC.2016.7749649",
    language = "English",
    volume = "2016-November",
    pages = "524--529",
    booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    address = "United States",

    }

    TY - GEN

    T1 - The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

    AU - Uruno, Aya

    AU - Kobayashi, Masakazu

    PY - 2016/11/18

    Y1 - 2016/11/18

    N2 - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

    AB - The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

    KW - AgGaTe

    KW - chalcopyrite

    KW - closed space sublimation

    KW - J-V characteristic

    KW - phase diagram

    UR - http://www.scopus.com/inward/record.url?scp=85003587657&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85003587657&partnerID=8YFLogxK

    U2 - 10.1109/PVSC.2016.7749649

    DO - 10.1109/PVSC.2016.7749649

    M3 - Conference contribution

    AN - SCOPUS:85003587657

    VL - 2016-November

    SP - 524

    EP - 529

    BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -