The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

    Original languageEnglish
    Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1-6
    Number of pages6
    ISBN (Electronic)9781509056057
    DOIs
    Publication statusPublished - 2018 May 25
    Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
    Duration: 2017 Jun 252017 Jun 30

    Other

    Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
    CountryUnited States
    CityWashington
    Period17/6/2517/6/30

    Fingerprint

    Sublimation
    Conversion efficiency
    Heterojunctions
    Etching
    Solar cells
    Annealing
    Fabrication
    Substrates

    Keywords

    • AgGaTe
    • Chalcopyrite
    • Closed space sublimation
    • J-V characteristic
    • Phase diagram

    ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Uruno, A., & Kobayashi, M. (2018). The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-6). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366048

    The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. / Uruno, Aya; Kobayashi, Masakazu.

    2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-6.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Uruno, A & Kobayashi, M 2018, The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 17/6/25. https://doi.org/10.1109/PVSC.2017.8366048
    Uruno A, Kobayashi M. The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-6 https://doi.org/10.1109/PVSC.2017.8366048
    Uruno, Aya ; Kobayashi, Masakazu. / The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-6
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    KW - J-V characteristic

    KW - Phase diagram

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