The Growth of CuGaTe2 Thin Films by Two-Step Closed Space Sublimation

Aya Uruno; Masakazu Kobayashi

doi:10.1002/pssa.201800883

The Growth of CuGaTe₂ Thin Films by Two-Step Closed Space Sublimation

Aya Uruno^*, Masakazu Kobayashi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

CuGaTe₂ layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu₂Te first layer is affected by the surface free energy of the different substrates. Cu₂Te grown on Si (001) comprises hexagonal islands which are highly oriented to the (0001). Conversely, Cu₂Te layers formed on Mo/quartz substrates forms a thin film. The surface morphology and the quality of the crystals in the CuGaTe₂ layers are investigated. Overgrowth by CuGaTe₂ of the Cu₂Te islands on Si substrates is confined to the islands only and there is no nucleation on the bare substrate. On the contrary, overgrowth by CuGaTe₂ on the continuous Cu₂Te films on Mo/quartz substrates produces continuous thin films. Therefore, the surface morphology of the CuGaTe₂ layers can be controlled by changing the substrate material because they have different surface free energies.

Original language	English
Article number	1800883
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	15
DOIs	https://doi.org/10.1002/pssa.201800883
Publication status	Published - 2019 Aug

Keywords

chalcopyrite
closed space sublimation
wettability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201800883

Cite this

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title = "The Growth of CuGaTe2 Thin Films by Two-Step Closed Space Sublimation",

abstract = "CuGaTe2 layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu2Te first layer is affected by the surface free energy of the different substrates. Cu2Te grown on Si (001) comprises hexagonal islands which are highly oriented to the (0001). Conversely, Cu2Te layers formed on Mo/quartz substrates forms a thin film. The surface morphology and the quality of the crystals in the CuGaTe2 layers are investigated. Overgrowth by CuGaTe2 of the Cu2Te islands on Si substrates is confined to the islands only and there is no nucleation on the bare substrate. On the contrary, overgrowth by CuGaTe2 on the continuous Cu2Te films on Mo/quartz substrates produces continuous thin films. Therefore, the surface morphology of the CuGaTe2 layers can be controlled by changing the substrate material because they have different surface free energies.",

keywords = "chalcopyrite, closed space sublimation, wettability",

author = "Aya Uruno and Masakazu Kobayashi",

note = "Funding Information: This work was supported in part by a Waseda University Grant for Special Research Projects, Grant-in-Aid for Young Scientists (Early Bird) at Waseda Research Institute for Science and Engineering, and the Sasakawa Scientific Research Grant from The Japan Science Society. We thank Edanz Group (www.edanzediting.com/ac) for editing a draft of this manuscript. Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = aug,

doi = "10.1002/pssa.201800883",

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PY - 2019/8

Y1 - 2019/8

N2 - CuGaTe2 layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu2Te first layer is affected by the surface free energy of the different substrates. Cu2Te grown on Si (001) comprises hexagonal islands which are highly oriented to the (0001). Conversely, Cu2Te layers formed on Mo/quartz substrates forms a thin film. The surface morphology and the quality of the crystals in the CuGaTe2 layers are investigated. Overgrowth by CuGaTe2 of the Cu2Te islands on Si substrates is confined to the islands only and there is no nucleation on the bare substrate. On the contrary, overgrowth by CuGaTe2 on the continuous Cu2Te films on Mo/quartz substrates produces continuous thin films. Therefore, the surface morphology of the CuGaTe2 layers can be controlled by changing the substrate material because they have different surface free energies.

AB - CuGaTe2 layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu2Te first layer is affected by the surface free energy of the different substrates. Cu2Te grown on Si (001) comprises hexagonal islands which are highly oriented to the (0001). Conversely, Cu2Te layers formed on Mo/quartz substrates forms a thin film. The surface morphology and the quality of the crystals in the CuGaTe2 layers are investigated. Overgrowth by CuGaTe2 of the Cu2Te islands on Si substrates is confined to the islands only and there is no nucleation on the bare substrate. On the contrary, overgrowth by CuGaTe2 on the continuous Cu2Te films on Mo/quartz substrates produces continuous thin films. Therefore, the surface morphology of the CuGaTe2 layers can be controlled by changing the substrate material because they have different surface free energies.

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