The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu; T. Kizu; W. Sun; F. Kazami; Masakazu Kobayashi; T. Asahi

doi:10.1109/ICIPRM.2016.7528603

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu, T. Kizu, W. Sun, F. Kazami, Masakazu Kobayashi, T. Asahi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528603
Publication status	Published - 2016 Aug 1
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 2016 Jun 26 → 2016 Jun 30

Other

Other	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	16/6/26 → 16/6/30

Keywords

molecular beam epitaxy
nano-facet structure
sapphire
zinc telluride

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ICIPRM.2016.7528603

Cite this

Nakasu, T., Kizu, T., Sun, W., Kazami, F., Kobayashi, M., & Asahi, T. (2016). The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528603] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528603

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. / Nakasu, Taizo; Kizu, T.; Sun, W. et al.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528603.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakasu, T, Kizu, T, Sun, W, Kazami, F, Kobayashi, M & Asahi, T 2016, The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528603, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528603

Nakasu T, Kizu T, Sun W, Kazami F, Kobayashi M, Asahi T. The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528603 doi: 10.1109/ICIPRM.2016.7528603

Nakasu, Taizo ; Kizu, T. ; Sun, W. et al. / The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016.

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title = "The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures",

abstract = "ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.",

keywords = "molecular beam epitaxy, nano-facet structure, sapphire, zinc telluride",

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AU - Kobayashi, Masakazu

AU - Asahi, T.

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N2 - ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

AB - ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

KW - molecular beam epitaxy

KW - nano-facet structure

KW - sapphire

KW - zinc telluride

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The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Abstract

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Keywords

ASJC Scopus subject areas

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