The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu, T. Kizu, W. Sun, F. Kazami, Masakazu Kobayashi, T. Asahi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

    Original languageEnglish
    Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509019649
    DOIs
    Publication statusPublished - 2016 Aug 1
    Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
    Duration: 2016 Jun 262016 Jun 30

    Other

    Other2016 Compound Semiconductor Week, CSW 2016
    CountryJapan
    CityToyama
    Period16/6/2616/6/30

    Fingerprint

    Aluminum Oxide
    Epilayers
    Sapphire
    Thin films
    Substrates
    Molecular beam epitaxy
    Poles
    Optical properties
    Crystals

    Keywords

    • molecular beam epitaxy
    • nano-facet structure
    • sapphire
    • zinc telluride

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Nakasu, T., Kizu, T., Sun, W., Kazami, F., Kobayashi, M., & Asahi, T. (2016). The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528603] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528603

    The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. / Nakasu, Taizo; Kizu, T.; Sun, W.; Kazami, F.; Kobayashi, Masakazu; Asahi, T.

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528603.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Nakasu, T, Kizu, T, Sun, W, Kazami, F, Kobayashi, M & Asahi, T 2016, The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528603, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528603
    Nakasu T, Kizu T, Sun W, Kazami F, Kobayashi M, Asahi T. The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528603 https://doi.org/10.1109/ICIPRM.2016.7528603
    Nakasu, Taizo ; Kizu, T. ; Sun, W. ; Kazami, F. ; Kobayashi, Masakazu ; Asahi, T. / The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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    abstract = "ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.",
    keywords = "molecular beam epitaxy, nano-facet structure, sapphire, zinc telluride",
    author = "Taizo Nakasu and T. Kizu and W. Sun and F. Kazami and Masakazu Kobayashi and T. Asahi",
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    AU - Nakasu, Taizo

    AU - Kizu, T.

    AU - Sun, W.

    AU - Kazami, F.

    AU - Kobayashi, Masakazu

    AU - Asahi, T.

    PY - 2016/8/1

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    AB - ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

    KW - molecular beam epitaxy

    KW - nano-facet structure

    KW - sapphire

    KW - zinc telluride

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