The Impact of High Pressure Dry O2 Oxidation on Sub-Quarter Micron Planarized LOCOS

T. Yamashita; T. Kuroi; T. Uchida; S. Komori; K. Kobayashi; M. Inuishi; H. Miyoshi

doi:10.1109/iedm.1996.554105

The Impact of High Pressure Dry O₂ Oxidation on Sub-Quarter Micron Planarized LOCOS

T. Yamashita, T. Kuroi, T. Uchida, S. Komori, K. Kobayashi, M. Inuishi, H. Miyoshi

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O₂ oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

Original language	English
Pages (from-to)	821-824
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/iedm.1996.554105
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1109/iedm.1996.554105

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abstract = "Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.",

author = "T. Yamashita and T. Kuroi and T. Uchida and S. Komori and K. Kobayashi and M. Inuishi and H. Miyoshi",

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AU - Yamashita, T.

AU - Kuroi, T.

AU - Uchida, T.

AU - Komori, S.

AU - Kobayashi, K.

AU - Inuishi, M.

AU - Miyoshi, H.

PY - 1996

Y1 - 1996

N2 - Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

AB - Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

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U2 - 10.1109/iedm.1996.554105

DO - 10.1109/iedm.1996.554105

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AN - SCOPUS:0030387082

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

The Impact of High Pressure Dry O₂ Oxidation on Sub-Quarter Micron Planarized LOCOS

Abstract

ASJC Scopus subject areas

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