The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

Takashi Kuroi, Maiko Kobayashi, Masayoshi Shirahata, Yoshiki Okumura, Shigeru Kusunoki, Masahide Inuishi, Natsuro Tsubouchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We studied the effects of nitrogen implantation into highly doped polysilicon gates in detail. It was found that highly arsenic-doped polysilicon gates caused degradation of gate oxide films and highly boron-doped polysilicon gates resulted in a shift of threshold voltage by boron penetration. Nitrogen implantation into polysilicon gates can effectively overcome these problems. The nitrogen implanted into the polysilicon gate is segregated into the gate oxide film during heat treatment after implantation. The nitrogen in the gate oxide film can act as a barrier layer for boron penetration and reduce the random failures of gate oxide films under highly doped polysilicon gates. Moreover, the hot carrier resistance can also be improved by nitrogen implantation. Highly reliable and high-performance dual-gate Complementary metal oxide semiconductor (CMOS) can be realized by the highly doped gate and the nitrogen implantation technique.

Original languageEnglish
Pages (from-to)771-775
Number of pages5
JournalJapanese Journal of Applied Physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Polysilicon
implantation
CMOS
Nitrogen
nitrogen
Oxide films
Metals
Boron
oxide films
boron
Hot carriers
Arsenic
Threshold voltage
Ion implantation
Oxide semiconductors
penetration
Heat treatment
Degradation
barrier layers
arsenic

Keywords

  • Boron penetration
  • CMOS
  • Dual-gate structure
  • Hot carrier
  • Nitrided oxide
  • Nitrogen ion implantation
  • Oxide reliability
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor. / Kuroi, Takashi; Kobayashi, Maiko; Shirahata, Masayoshi; Okumura, Yoshiki; Kusunoki, Shigeru; Inuishi, Masahide; Tsubouchi, Natsuro.

In: Japanese Journal of Applied Physics, Vol. 34, No. 2S, 1995, p. 771-775.

Research output: Contribution to journalArticle

Kuroi, Takashi ; Kobayashi, Maiko ; Shirahata, Masayoshi ; Okumura, Yoshiki ; Kusunoki, Shigeru ; Inuishi, Masahide ; Tsubouchi, Natsuro. / The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor. In: Japanese Journal of Applied Physics. 1995 ; Vol. 34, No. 2S. pp. 771-775.
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abstract = "We studied the effects of nitrogen implantation into highly doped polysilicon gates in detail. It was found that highly arsenic-doped polysilicon gates caused degradation of gate oxide films and highly boron-doped polysilicon gates resulted in a shift of threshold voltage by boron penetration. Nitrogen implantation into polysilicon gates can effectively overcome these problems. The nitrogen implanted into the polysilicon gate is segregated into the gate oxide film during heat treatment after implantation. The nitrogen in the gate oxide film can act as a barrier layer for boron penetration and reduce the random failures of gate oxide films under highly doped polysilicon gates. Moreover, the hot carrier resistance can also be improved by nitrogen implantation. Highly reliable and high-performance dual-gate Complementary metal oxide semiconductor (CMOS) can be realized by the highly doped gate and the nitrogen implantation technique.",
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