The influence of low-temperature annealing on the physical properties of bi2sr2cacu2cl y thin films

Y. Shinma, Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticlepeer-review


    We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2Ov thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tcand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.

    Original languageEnglish
    Pages (from-to)79-83
    Number of pages5
    JournalPhase Transitions
    Issue number1-2
    Publication statusPublished - 1993 Jan 1


    • low-temperature annealing
    • oxygen partial pressure during annealing
    • The 2212 phase of Bi-based superconductor
    • the BiO planes
    • the ligand of Bi atom
    • XPS

    ASJC Scopus subject areas

    • Materials Science(all)
    • Instrumentation


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