Abstract
Film Bulk Acoustic Resonator (FBAR) will become commonplace for the frequency filter used in mobile communication. AIN films were used for piezoelectric material of FBAR. High piezoelectricity of ScAlN films have attracted much attention as FBAR material. However, negative ion generation at Sc metal target induces degradation of the crystallinity due to the ion bombardment on ScAlN films during the sputtering growth. Large amount of O- and CN-ions generation at sputtering target were observed. In this study, we compared the energy distributions of negative ions of arc-melted and sintered ScAl alloy targets which have different oxygen and carbon concentration. The c-axis orientation and electromechanical coupling coefficient kt2of ScAlN films fabricated with these different targets were also compared. As a result, the kt2of two targets was larger than our previous report. There were the large differences in amount of O- and CN- ions generation in the two targets. However, it does not significantly affect the results of the crystallization and kt2of the ScAlN films.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE International Ultrasonics Symposium, IUS 2018 |
| Publisher | IEEE Computer Society |
| Volume | 2018-October |
| ISBN (Electronic) | 9781538634257 |
| DOIs | |
| Publication status | Published - 2018 Dec 17 |
| Event | 2018 IEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan Duration: 2018 Oct 22 → 2018 Oct 25 |
Other
| Other | 2018 IEEE International Ultrasonics Symposium, IUS 2018 |
|---|---|
| Country | Japan |
| City | Kobe |
| Period | 18/10/22 → 18/10/25 |
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Keywords
- electro mechanical coefficient
- negative ion bombardment
- piezoelectric film
- ScAlN
ASJC Scopus subject areas
- Acoustics and Ultrasonics
Cite this
The Influence of Negative Ions Generation on the Arc-Melted and Hot Press Sintered Scal Alloy Targets to the Crystalline Orientation and kt 2 of the Scaln Films. / Endo, Yuka; Karasawa, Rei; Takayanagi, Shinji; Imakawa, Makoto; Morisaka, Keisuke; Suzuki, Yu; Yanagitani, Takahiko.
2018 IEEE International Ultrasonics Symposium, IUS 2018. Vol. 2018-October IEEE Computer Society, 2018. 8579841.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The Influence of Negative Ions Generation on the Arc-Melted and Hot Press Sintered Scal Alloy Targets to the Crystalline Orientation and kt 2 of the Scaln Films
AU - Endo, Yuka
AU - Karasawa, Rei
AU - Takayanagi, Shinji
AU - Imakawa, Makoto
AU - Morisaka, Keisuke
AU - Suzuki, Yu
AU - Yanagitani, Takahiko
PY - 2018/12/17
Y1 - 2018/12/17
N2 - Film Bulk Acoustic Resonator (FBAR) will become commonplace for the frequency filter used in mobile communication. AIN films were used for piezoelectric material of FBAR. High piezoelectricity of ScAlN films have attracted much attention as FBAR material. However, negative ion generation at Sc metal target induces degradation of the crystallinity due to the ion bombardment on ScAlN films during the sputtering growth. Large amount of O- and CN-ions generation at sputtering target were observed. In this study, we compared the energy distributions of negative ions of arc-melted and sintered ScAl alloy targets which have different oxygen and carbon concentration. The c-axis orientation and electromechanical coupling coefficient kt2of ScAlN films fabricated with these different targets were also compared. As a result, the kt2of two targets was larger than our previous report. There were the large differences in amount of O- and CN- ions generation in the two targets. However, it does not significantly affect the results of the crystallization and kt2of the ScAlN films.
AB - Film Bulk Acoustic Resonator (FBAR) will become commonplace for the frequency filter used in mobile communication. AIN films were used for piezoelectric material of FBAR. High piezoelectricity of ScAlN films have attracted much attention as FBAR material. However, negative ion generation at Sc metal target induces degradation of the crystallinity due to the ion bombardment on ScAlN films during the sputtering growth. Large amount of O- and CN-ions generation at sputtering target were observed. In this study, we compared the energy distributions of negative ions of arc-melted and sintered ScAl alloy targets which have different oxygen and carbon concentration. The c-axis orientation and electromechanical coupling coefficient kt2of ScAlN films fabricated with these different targets were also compared. As a result, the kt2of two targets was larger than our previous report. There were the large differences in amount of O- and CN- ions generation in the two targets. However, it does not significantly affect the results of the crystallization and kt2of the ScAlN films.
KW - electro mechanical coefficient
KW - negative ion bombardment
KW - piezoelectric film
KW - ScAlN
UR - http://www.scopus.com/inward/record.url?scp=85060609017&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85060609017&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2018.8579841
DO - 10.1109/ULTSYM.2018.8579841
M3 - Conference contribution
VL - 2018-October
BT - 2018 IEEE International Ultrasonics Symposium, IUS 2018
PB - IEEE Computer Society
ER -