The integration of Gaon SiC at room temperature by surface activated bonding method

Yang Xu, Fengwen Mu, Yinghui Wang, Dapeng Chen, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of Gaon SiC is a promising method to reduce the self-heating of Ga-based devices. The bonding with an average bonding energy of \sim 2.31\mathrm {J} /\mathrm {m}^{\mathbf {2}} was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate \mathrm {a}\sim 2.2 nm amorphous SiC layer and \sim 1.8 nm amorphous Galayer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by \sim 0.5 nm after annealing, which may due to the further diffusion of Ga and Si.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Temperature
Ion beams
Annealing
Heating

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Xu, Y., Mu, F., Wang, Y., Chen, D., & Suga, T. (2019). The integration of Gaon SiC at room temperature by surface activated bonding method. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735134] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735134

The integration of Gaon SiC at room temperature by surface activated bonding method. / Xu, Yang; Mu, Fengwen; Wang, Yinghui; Chen, Dapeng; Suga, Tadatomo.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735134 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xu, Y, Mu, F, Wang, Y, Chen, D & Suga, T 2019, The integration of Gaon SiC at room temperature by surface activated bonding method. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735134, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735134
Xu Y, Mu F, Wang Y, Chen D, Suga T. The integration of Gaon SiC at room temperature by surface activated bonding method. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735134. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735134
Xu, Yang ; Mu, Fengwen ; Wang, Yinghui ; Chen, Dapeng ; Suga, Tadatomo. / The integration of Gaon SiC at room temperature by surface activated bonding method. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
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