The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation

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    Abstract

    Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.

    Original languageEnglish
    JournalPhysica Status Solidi (A) Applications and Materials Science
    DOIs
    Publication statusAccepted/In press - 2018 Jan 1

    Fingerprint

    Sublimation
    sublimation
    Excitons
    Photoluminescence
    Optical properties
    optical properties
    excitons
    photoluminescence
    Thin films
    Byproducts
    Solar cells
    Energy gap
    radiative recombination
    thin films
    Activation energy
    Impurities
    Defects
    solar cells
    activation energy
    impurities

    Keywords

    • chalcopyrites
    • closed space sublimation
    • photoluminescence
    • solar cells

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

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    title = "The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation",
    abstract = "Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.",
    keywords = "chalcopyrites, closed space sublimation, photoluminescence, solar cells",
    author = "Aya Uruno and Masakazu Kobayashi",
    year = "2018",
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    AU - Uruno, Aya

    AU - Kobayashi, Masakazu

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    N2 - Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.

    AB - Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.

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    KW - solar cells

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