"All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO 2Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.
|Number of pages||9|
|Publication status||Published - 2003 Dec 1|
|Event||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Conference||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium|
|Period||03/10/12 → 03/10/17|
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