The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers

Masahiro Yoshino, Yuichi Nonaka, Tokihiko Yokoshima, Tetsuya Osaka

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

"All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO 2Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.

Original languageEnglish
Pages137-145
Number of pages9
Publication statusPublished - 2003 Dec 1
EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 17

Conference

ConferenceCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL
Period03/10/1203/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Yoshino, M., Nonaka, Y., Yokoshima, T., & Osaka, T. (2003). The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. 137-145. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.