The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers

Masahiro Yoshino, Yuichi Nonaka, Tokihiko Yokoshima, Tetsuya Osaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

"All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO 2Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsG.S. Mathad
Pages137-145
Number of pages9
Volume10
Publication statusPublished - 2003
EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL
Duration: 2003 Oct 122003 Oct 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
CityOrlando, FL
Period03/10/1203/10/17

Fingerprint

Electroless plating
Fabrication
Self assembled monolayers
Electric wiring
Adhesives
Thermodynamic stability
Adhesion
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. / Yoshino, Masahiro; Nonaka, Yuichi; Yokoshima, Tokihiko; Osaka, Tetsuya.

Proceedings - Electrochemical Society. ed. / G.S. Mathad. Vol. 10 2003. p. 137-145.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshino, M, Nonaka, Y, Yokoshima, T & Osaka, T 2003, The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. in GS Mathad (ed.), Proceedings - Electrochemical Society. vol. 10, pp. 137-145, Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, 03/10/12.
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