The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers

Masahiro Yoshino; Yuichi Nonaka; Tokihiko Yokoshima; Tetsuya Osaka

The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers

Masahiro Yoshino^*, Yuichi Nonaka, Tokihiko Yokoshima, Tetsuya Osaka

^*Corresponding author for this work

Research Organization for Nano & Life Innovation

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

"All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO ₂Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.

Original language	English
Pages	137-145
Number of pages	9
Publication status	Published - 2003 Dec 1
Event	Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States Duration: 2003 Oct 12 → 2003 Oct 17

Conference

Conference	Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL
Period	03/10/12 → 03/10/17

ASJC Scopus subject areas

Engineering(all)

Cite this

Yoshino, M., Nonaka, Y., Yokoshima, T., & Osaka, T. (2003). The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. 137-145. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. / Yoshino, Masahiro; Nonaka, Yuichi; Yokoshima, Tokihiko et al.

2003. 137-145 Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Research output: Contribution to conference › Paper › peer-review

Yoshino, M, Nonaka, Y, Yokoshima, T & Osaka, T 2003, 'The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers', Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States, 03/10/12 - 03/10/17 pp. 137-145.

Yoshino M, Nonaka Y, Yokoshima T, Osaka T. The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. 2003. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Yoshino, Masahiro ; Nonaka, Yuichi ; Yokoshima, Tokihiko et al. / The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.9 p.

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AU - Osaka, Tetsuya

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AB - "All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO 2Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.

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The proposal of all-wet fabrication process for ulsi interconnects technologies - Application of electroless NiB deposition to capping and barrier layers

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ASJC Scopus subject areas

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