The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system

Wataru Sugimoto, Hiroshi Yamamoto, Yoshiyuki Sugahara, Kazuyuki Kuroda

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

    Original languageEnglish
    Pages (from-to)83-89
    Number of pages7
    JournalJournal of Physics and Chemistry of Solids
    Volume59
    Issue number1
    Publication statusPublished - 1998 Jan

    Fingerprint

    spinel
    Structural properties
    Electric properties
    electrical properties
    conduction
    electrical resistivity
    Argon
    Titanium
    Solid state reactions
    X ray powder diffraction
    Temperature
    Solid solutions
    solid solutions
    titanium
    Activation energy
    argon
    activation energy
    solid state
    atmospheres
    temperature dependence

    Keywords

    • A. oxides
    • A. semiconductors
    • D. electrical properties
    • D. transport properties

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

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    abstract = "Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.",
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    author = "Wataru Sugimoto and Hiroshi Yamamoto and Yoshiyuki Sugahara and Kazuyuki Kuroda",
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    AU - Sugimoto, Wataru

    AU - Yamamoto, Hiroshi

    AU - Sugahara, Yoshiyuki

    AU - Kuroda, Kazuyuki

    PY - 1998/1

    Y1 - 1998/1

    N2 - Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

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