The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system

Wataru Sugimoto; Hiroshi Yamamoto; Yoshiyuki Sugahara; Kazuyuki Kuroda

doi:10.1016/S0022-3697(97)00140-6

The relationship between structural variation and electrical properties in the spinel MgV_2-xTi_xO₄ (0 ≤ x ≤ 1.8) system

Wataru Sugimoto, Hiroshi Yamamoto, Yoshiyuki Sugahara, Kazuyuki Kuroda

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Polycrystalline samples of MgV_2-xTi_xO₄ (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

Original language	English
Pages (from-to)	83-89
Number of pages	7
Journal	Journal of Physics and Chemistry of Solids
Volume	59
Issue number	1
DOIs	https://doi.org/10.1016/S0022-3697(97)00140-6
Publication status	Published - 1998 Jan

Keywords

A. oxides
A. semiconductors
D. electrical properties
D. transport properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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title = "The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system",

abstract = "Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.",

keywords = "A. oxides, A. semiconductors, D. electrical properties, D. transport properties",

author = "Wataru Sugimoto and Hiroshi Yamamoto and Yoshiyuki Sugahara and Kazuyuki Kuroda",

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AU - Yamamoto, Hiroshi

AU - Sugahara, Yoshiyuki

AU - Kuroda, Kazuyuki

PY - 1998/1

Y1 - 1998/1

N2 - Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

AB - Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

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