The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system

Wataru Sugimoto*, Hiroshi Yamamoto, Yoshiyuki Sugahara, Kazuyuki Kuroda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.

Original languageEnglish
Pages (from-to)83-89
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Issue number1
Publication statusPublished - 1998 Jan


  • A. oxides
  • A. semiconductors
  • D. electrical properties
  • D. transport properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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