Abstract
Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 83-89 |
| Number of pages | 7 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 59 |
| Issue number | 1 |
| Publication status | Published - 1998 Jan |
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Keywords
- A. oxides
- A. semiconductors
- D. electrical properties
- D. transport properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system. / Sugimoto, Wataru; Yamamoto, Hiroshi; Sugahara, Yoshiyuki; Kuroda, Kazuyuki.
In: Journal of Physics and Chemistry of Solids, Vol. 59, No. 1, 01.1998, p. 83-89.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The relationship between structural variation and electrical properties in the spinel MgV2-xTixO4 (0 ≤ x ≤ 1.8) system
AU - Sugimoto, Wataru
AU - Yamamoto, Hiroshi
AU - Sugahara, Yoshiyuki
AU - Kuroda, Kazuyuki
PY - 1998/1
Y1 - 1998/1
N2 - Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.
AB - Polycrystalline samples of MgV2-xTixO4 (0 ≤ x ≤ 1.8) were prepared by solid-state reactions under an argon atmosphere and their electrical properties were studied. X-ray powder diffraction analysis indicated the formation of the spinel phase as the major compound. Solid solutions were formed throughout the system, as indicated by the monotonic variation of the unit-cell parameter. All the samples were semiconducting below room temperature. A minimum in the activation energy required for semiconduction was observed at x = 1.0. A change in resistivity behavior was observed when the titanium content was increased. For 0 ≤ x ≤ 1.2, the conduction behavior was interpreted as the hopping conduction of thermally activated electrons, whereas the resistivity behavior for 1.4 ≤ x ≤ 1.8 was characterized by a weak temperature dependence at-low temperatures.
KW - A. oxides
KW - A. semiconductors
KW - D. electrical properties
KW - D. transport properties
UR - http://www.scopus.com/inward/record.url?scp=0031641559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031641559&partnerID=8YFLogxK
M3 - Article
VL - 59
SP - 83
EP - 89
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 1
ER -