The role of stacked insulating layers on thin-film electroluminescent devices

Junichi Ohwaki, Noriyoshi Yamauchi, Haruki Kozawaguchi, Bunjiro Tsujiyama

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The charge versus applied voltage (Q-V) characteristics of a thin-film electroluminescent (TFEL) device with an Al/SiO2/Ta2O5/ZnS/Ta2O5/ITO/Glass structure are investigated. The results for a stacked insulating layer TFEL device are summarized as follows. The maximum charge (Qmax) of the TFEL device is determined by the highest Qmax of insulators. The SiO2 insulating layer used in this study shows that the dielectric avalanche breakdown and the electric field of the film is clamped in the region above its own breakdown field strength under current conditions limited by the Ta2O5 insulating layers. The TFEL device shows a hexagonal Q-V loop in high electric fields.

Original languageEnglish
Pages (from-to)1064-1068
Number of pages5
JournalJapanese journal of applied physics
Volume26
Issue number7R
DOIs
Publication statusPublished - 1987 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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