Abstract
Crystallography, martensite morphology, surface relief and shape memory effect in a simple hexagonal to β-Sn martensitic transition of Sn-(7.0-9.5) at.% In alloys have been investigated. The structure of β-Sn martensite consists of thin and lenticular plates. New surface reliefs appear on the reverse transition after the forward transition; that is, incomplete reversibility of the atomistic sequence of the transition has been found. Correspondingly, the degree of a shape memory effect is small. The orientation relationship between the simple hexagonal and β-Sn structures, (0001)s.h.//(100)β-Sn and [1̄21̄0]s.h.//[001]β-Sn, has been determined. From these results, the mechanism for the martensitic transition has been proposed; simple atomic displacements corresponding to 1 2 〈101̄1〉 transverse phonons with polarization vectors along the 〈1̄21̄0〉 directions induce the transition. This mechanism predicts the formation of three types of transformation twins constituting substructures and can explain the incomplete crystallographic reversibility of the transition.
| Original language | English |
|---|---|
| Pages (from-to) | 597-602 |
| Number of pages | 6 |
| Journal | Acta Metallurgica |
| Volume | 37 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1989 |
| Externally published | Yes |
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The simple hexagonal to β-Sn martensitic transition in Sn-(7.0-9.5) at.% in alloys. / Koyama, Yasumasa; Suzuki, H.
In: Acta Metallurgica, Vol. 37, No. 2, 1989, p. 597-602.Research output: Contribution to journal › Article
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TY - JOUR
T1 - The simple hexagonal to β-Sn martensitic transition in Sn-(7.0-9.5) at.% in alloys
AU - Koyama, Yasumasa
AU - Suzuki, H.
PY - 1989
Y1 - 1989
N2 - Crystallography, martensite morphology, surface relief and shape memory effect in a simple hexagonal to β-Sn martensitic transition of Sn-(7.0-9.5) at.% In alloys have been investigated. The structure of β-Sn martensite consists of thin and lenticular plates. New surface reliefs appear on the reverse transition after the forward transition; that is, incomplete reversibility of the atomistic sequence of the transition has been found. Correspondingly, the degree of a shape memory effect is small. The orientation relationship between the simple hexagonal and β-Sn structures, (0001)s.h.//(100)β-Sn and [1̄21̄0]s.h.//[001]β-Sn, has been determined. From these results, the mechanism for the martensitic transition has been proposed; simple atomic displacements corresponding to 1 2 〈101̄1〉 transverse phonons with polarization vectors along the 〈1̄21̄0〉 directions induce the transition. This mechanism predicts the formation of three types of transformation twins constituting substructures and can explain the incomplete crystallographic reversibility of the transition.
AB - Crystallography, martensite morphology, surface relief and shape memory effect in a simple hexagonal to β-Sn martensitic transition of Sn-(7.0-9.5) at.% In alloys have been investigated. The structure of β-Sn martensite consists of thin and lenticular plates. New surface reliefs appear on the reverse transition after the forward transition; that is, incomplete reversibility of the atomistic sequence of the transition has been found. Correspondingly, the degree of a shape memory effect is small. The orientation relationship between the simple hexagonal and β-Sn structures, (0001)s.h.//(100)β-Sn and [1̄21̄0]s.h.//[001]β-Sn, has been determined. From these results, the mechanism for the martensitic transition has been proposed; simple atomic displacements corresponding to 1 2 〈101̄1〉 transverse phonons with polarization vectors along the 〈1̄21̄0〉 directions induce the transition. This mechanism predicts the formation of three types of transformation twins constituting substructures and can explain the incomplete crystallographic reversibility of the transition.
UR - http://www.scopus.com/inward/record.url?scp=0024611574&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024611574&partnerID=8YFLogxK
U2 - 10.1016/0001-6160(89)90243-5
DO - 10.1016/0001-6160(89)90243-5
M3 - Article
AN - SCOPUS:0024611574
VL - 37
SP - 597
EP - 602
JO - Acta Materialia
JF - Acta Materialia
SN - 1359-6454
IS - 2
ER -